SIDR638DP-T1-GE3 Datasheet SIDR638DP-T1-GE3 | P1-P3

SiDR638DP

www.vishay.com

Vishay Siliconix

S17-1001-Rev. A, 03-Jul-17

1

Document Number: 75312

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• Very low R

DS

- Q

g

figure-of-merit (FOM)

• Tuned for the lowest R

DS

- Q

oss

FOM

• Top side cooling feature provides additional

venue for thermal transfer

• 100 % R

g

and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

•DC/DC converters

•OR-ing

• Motor drive control

• Battery and load switch

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

g. T

C

= 25 °C

PRODUCT SUMMARY

V

DS

(V) 40

R

DS(on)

max. (Ω) at V

GS

= 10 V 0.00088

R

DS(on)

max. (Ω) at V

GS

= 7.5 V 0.00116

Q

g

typ. (nC) 63

I

D

(A) 100

a, g

Configuration Single

PowerPAK

®

SO-8DC

Top View

S

1

6.15 mm

5

.15 mm

Bottom View

2

S

3

S

4

G

1

S

D

7

D

6

D

5

D

8

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package PowerPAK SO-8DC

Lead (Pb)-free and halogen-free SiDR638DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

40

V

Gate-source voltage V

GS

+20, -16

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

100

a

A

T

C

= 70 °C 100

a

T

A

= 25 °C 64.6

b, c

T

A

= 70 °C 51.7

b, c

Pulsed drain current (t = 100 μs) I

DM

400

Continuous source-drain diode current

T

C

= 25 °C

I

S

100

a

T

A

= 25 °C 5.6

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

50

Single pulse avalanche energy E

AS

125 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

125

W

T

C

= 70 °C 80

T

A

= 25 °C 6.25

b, c

T

A

= 70 °C 4

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

c

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b

t ≤ 10 s R

thJA

15 20

°C/WMaximum junction-to-case (drain) Steady state R

thJC

0.8 1.0

Maximum junction-to-case (source) Steady state R

thJC

1.1 1.4

SiDR638DP

www.vishay.com

Vishay Siliconix

S17-1001-Rev. A, 03-Jul-17

2

Document Number: 75312

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 40 - - V

V

DS

temperature coefficient ΔV

DS

/T

J

I

D

= 250 μA - 24 -

mV/°C

V

GS(th)

temperature coefficient ΔV

GS(th)

/T

J

I

D

= 250 μA - -5.4 -

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.1 - 2.3 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +20 V, -16 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 40 V, V

GS

= 0 V - - 1

μA

V

DS

= 40 V, V

GS

= 0 V, T

J

= 70 °C - - 10

On-state drain current

a

I

D(on)

V

DS

≥ 5 V, V

GS

=10 V 50 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

=10 V, I

D

= 20 A - 0.00073 0.00088

Ω

V

GS

= 4.5 V, I

D

= 15 A - 0.00096 0.00116

Forward transconductance

a

g

fs

V

DS

= 10 V, I

D

= 20 A - 147 - S

Dynamic

b

Input capacitance C

iss

V

DS

= 20 V, V

GS

= 0 V, f = 1 MHz

- 10 500 -

pFOutput capacitance C

oss

- 1530 -

Reverse transfer capacitance C

rss

- 250 -

C

rss

/C

iss

ratio C

rss

/C

iss

- 0.024 0.048

Total gate charge Q

g

V

DS

= 20 V, V

GS

= 10 V, I

D

= 20 A - 136 204

nCV

DS

= 20 V, V

GS

= 4.5 V, I

D

= 20 A

-6395

Gate-source charge Q

gs

- 30.5 -

Gate-drain charge Q

gd

- 10.6 -

Output charge Q

oss

V

DS

= 20 V, V

GS

= 0 V - 75 104

Gate resistance R

g

f = 1 MHz 0.3 0.88 1.5 Ω

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 1 Ω, I

D

≅ 20 A,

V

GEN

= 10 V, R

g

= 1 Ω

-2040

ns

Rise time t

r

-2142

Turn-off delay time t

d(off)

- 52 100

Fall time t

f

-1020

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 1 Ω, I

D

≅ 20 A,

V

GEN

= 4.5 V, R

g

= 1 Ω

- 70 140

Rise time t

r

-1632

Turn-off delay time t

d(off)

-4386

Fall time t

f

-1938

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - 100

A

Pulse diode forward current (t

p

= 100 μs) I

SM

- - 400

Body diode voltage V

SD

I

S

= 10 A, V

GS

= 0 V - 0.74 1.1 V

Body diode reverse recovery time t

rr

I

F

= 20 A, di/dt = 100 A/μs, T

J

= 25 °C

- 59 118 ns

Body diode reverse recovery charge Q

rr

- 85 1700 nC

Reverse recovery fall time t

a

-34-

ns

Reverse recovery rise time t

b

-25-

SiDR638DP

www.vishay.com

Vishay Siliconix

S17-1001-Rev. A, 03-Jul-17

3

Document Number: 75312

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

30

60

90

120

150

00.511.522.5

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 3 V

V

GS

= 2 V

10

100

1000

10000

0.0006

0.0007

0.0008

0.0009

0.001

0.0011

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0306090120150

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 10 V

V

DS

= 20 V

V

DS

= 30 V

I

D

= 20 A

10

100

1000

10000

0

30

60

90

120

150

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

3000

6000

9000

12000

15000

0 8 16 24 32 40

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.5

0.8

1.1

1.4

1.7

2.0

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 20 A

V

GS

= 10 V

V

GS

= 4.5 V

SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

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