RF201L2STE25

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©2011 ROHM Co., Ltd. All rights reserved.

Fast Recovery Diode

RF201L2S

Applications Dimensions (Unit : mm)

General rectification

Features

1)Small power mold type. (PMDS)

2)Ultra low V

F

3)Ultra high switching speed

4)Low switching loss

Construction

Silicon epitaxial planer Structure

Taping dimensions (Unit : mm)

Absolute maximum ratings (Ta=25°C)

Symbol Unit

V

RM

V

V

R

V

Io A

I

FSM

A

Tj °C

Tstg °C

Electrical characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Conditions

Forward voltage

V

F

- 0.815 0.87 V I

F

=2.0A

I

R

- 0.01 10 μAV

R

=200V

Reverse recovery time trr - 14 25 ns

I

F

=0.5A,I

R

=1A,Irr=0.25*I

R

Parameter Limits

Reverse voltage (repetitive) 200

Reverse voltage (DC) 200

Average rectified forward current (*1) 2

Reverse current

Land size figure (Unit : mm)

Storage temperature

55 to 150

(*1)Mounted on epoxy board. 180°Half sine wave

Parameter

Forward current surge peak (60Hz・1cyc) 20

Junction temperature 150

PMDS

2.0

4.2

2.0

ROHM : PMDS

JEDEC : SOD-106

①

Manufacture date

②

① ②

66

0.1±0.02

　　　 0.1

2.6±0.2

2.0±0.2

5.0±0.3

1.2±0.3

4.5±0.2

1.5±0.2

7

4.0±0.1

2.9±0.1

4.0±0.1

2.0±0.05

φ1.55±0.05

5.5±0.05

1.75±0.1

12±0.2

φ1.55

9.5±0.1

0.3

5.3

2.8M AX

+0.1

-0.0

1/3 2011.09 Rev.B

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RF201L2S

50

60

70

80

90

100

110

120

130

140

150

AVE:102.3pF

f=1MHz

VR=0V

0

0.5

1

1.5

2

2.5

3

01234

DC

Sin(θ＝

180)

D=1/2

1

10

100

1000

110100

8.3ms

Ifsm

1cyc

8.3ms

0

5

10

15

20

25

30

AVE:14.3ns

Ta=25℃

IF=0.5A

IR=1A

Irr=0.25*IR

n=10pcs

0

10

20

30

40

50

60

70

80

90

100

Ta=25℃

VR=200V

n=30pcs

AVE:16.6ns

0

50

100

150

200

250

AVE:108.0A

800

810

820

830

840

850

AVE:815.3mV

1

10

100

1000

0 5 10 15 20 25 30

FORWARD VOLTAGE：VF(V)

VF-IF CHARACTERISTICS

FORWARD CURRENT:IF(A)

REVERSE CURRENT:IR(nA)

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

VF DISPERSION MAP

FORWARD VOLTAGE:VF(mV)

REVERSE CURRENT:IR(nA)

IR DISPERSION MAP

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

Ct DISPERSION MAP

IFSM DISRESION MAP

PEAK SURGE

FORWARD CURRENT:IFSM(A)

PEAK SURGE

FORWARD CURRENT:IFSM(A)

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

PEAK SURGE

FORWARD CURRENT:IFSM(A)

TIME:t(ms)

IFSM-t CHARACTERISTICS

TIME:t(s)

Rth-t CHARACTERISTICS

TRANSIENT

THAERMAL IMPEDANCE:Rth (℃/W)

trr DISPERSION MAP

REVERSE RECOVERY TIME:trr(ns)

f=1MHz

Ta=25℃

IF=2A

n=30pcs

FORWARD POWER

DISSIPATION:Pf(W)

AVERAGE RECTIFIED

FORWARD CURRENT：Io(A)

Io-Pf CHARACTERISTICS

0.001

0.01

0.1

1

10

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

150℃

25℃

75℃

125℃

-25℃

0.1

1

10

100

1000

10000

0 50 100 150 200

25℃

75℃

-25℃

125℃

150℃

8.3ms

Ifsm

1cyc

0.1

1

10

100

1000

0.001 0.01 0.1 1 10 100 1000

Rth(j-a)

Rth(j-c)

1m

IM=10m

A

IF=100mA

300u

t

ime

0

50

100

150

200

110100

t

Ifsm

Mounted on epoxy board

2/3 2011.09 Rev.B

www.rohm.com

© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RF201L2S

AMBIENT TEMPERATURE:Ta(℃)

Derating Curveﾞ(Io-Ta)

AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)

AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)

CASE TEMPARATURE:Tc(℃)

Derating Curveﾞ(Io-Tc)

ELECTROSTATIC

DISCHARGE TEST ESD(KV)

ESD DISPERSION MAP

0

5

10

15

20

25

30

C=200pF

R=0Ω

C=100pF

R=1.5kΩ

AVE:21.0kV

No break at 30kV

0

1

2

3

4

5

0 25 50 75 100 125 150

Sin(θ＝180

)

DC

D=1/2

T

Tj=150℃

D=t/T

t

VR

Io

VR=100V

0A

0V

0

1

2

3

4

5

0 25 50 75 100 125 150

T

Tj=150℃

D=t/T

t

VR

Io

VR=100V

0A

0V

Sin(θ＝180)

DC

D=1/2

3/3 2011.09 Rev.B

RF201L2STE25

Mfr. #:

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Description:

Rectifiers DIODE FAST REVERY 200V 2A

Lifecycle:

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RF201L2STE25