STGD7NB120S-1 Datasheet STGD7NB120S-1 | P1-P3

1/6

PRELIMINARY DATA

Aug 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STGD7NB120S-1

N-CHANNEL 7A - 1200V - IPAK

PowerMESH™ IGBT

(●) Pulse width limited by safe operating area

■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■ VERY LOW ON-VOLTAGE DROP (V

cesat

)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ HIGH CURRENT CAPABILITY

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH

™

IGBTs, with outstanding

performances. The suffix “S” identifies a family

optimized achieve minimum on-voltage drop for low

frequency applications (<1kHz).

APPLICATIONS

■ MOTOR CONTROL

■ LIGHT DIMMER

■ INTRUSH CURRENT LIMITATION

ABSOLUTE MAXIMUM RATINGS

TYPE V

CES

V

CE(sat)

I

C

STGD7NB120S-1 1200 V < 2.1

V7 A

Symbol Parameter Value Unit

V

CES

Collector-Emitter Voltage (V

GS

= 0)

1200 V

V

ECR

Reverse Battery Protection 20 V

V

GE

Gate-Emitter Voltage ±20 V

I

C

Collector Current (continuos) at T

C

= 25°C

10 A

I

C

Collector Current (continuos) at T

C

= 100°C

7A

I

CM

(■)

Collector Current (pulsed) 20 A

P

TOT

Total Dissipation at T

C

= 25°C

55 W

Derating Factor 0.4 W/°C

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

IPAK

3

2

1

INTERNAL SCHEMATIC DIAGRAM

Obsolete Product(s) - Obsolete Product(s)

STGD7NB120S-1

2/6

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON

(1)

DYNAMIC

SWITCHING ON

Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collectro-Emitter Breakdown

Voltage

I

C

= 250 µA, V

GE

= 0

1200 V

V

BR(ECR)

Emitter-Collectro Breakdown

Voltage

I

C

= 10mA, V

GE

= 0

20 V

I

CES

Collector cut-off

(V

GE

= 0)

V

CE

= Max Rating, T

C

= 25 °C

50 µA

V

CE

= Max Rating, T

C

= 125 °C

250 µA

I

GES

Gate-Emitter Leakage

Current (V

CE

= 0)

V

GE

= ±20V , V

CE

= 0

±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold Voltage

V

CE

= V

GE

, I

C

= 250µA

35V

V

GE

Gate Emitter Voltage

V

CE

=2.5V, I

C

= 2A,

Tj = 25÷125°C

6.5 V

V

CE(sat)

Collector-Emitter Saturation

Voltage

V

GE

= 15V, I

C

= 3.5 A

1.6 V

V

GE

= 15V, I

C

= 7 A

2.1 V

V

GE

= 15V, I

C

= 10 A

1.7

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

Forward Transconductance

V

CE

= 25 V

,

I

C

=7 A

2.5 4.5 S

C

ies

Input Capacitance

V

CE

= 25V, f = 1 MHz, V

GE

= 0

430 pF

C

oes

Output Capacitance 40 pF

C

res

Reverse Transfer

Capacitance

7pF

Q

g

Gate Charge

V

CE

= 960V, I

C

= 7 A,

V

GE

= 15V

29 nC

I

CL

Latching Current

V

clamp

= 960V , Tj = 150°C

R

G

= 1K

Ω

10 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

V

CC

= 960 V, I

C

= 7 A

R

G

=1K

Ω

, V

GE

= 15 V

570 ns

t

r

Rise Time 270 ns

(di/dt)

on

Turn-on Current Slope

V

CC

= 960 V, I

C

= 7 A, R

G

=1K

Ω

V

GE

= 15 V, Tj = 125°C

800 A/µs

Eon Turn-on Switching Losses 3.2 µJ

Obsolete Product(s) - Obsolete Product(s)

3/6

STGD7NB120S-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

c

Cross-over Time

V

cc

= 960 V, I

C

= 7 A,

R

GE

= 1K

Ω

, V

GE

= 15 V

4.9

µs

t

r

(V

off

)

Off Voltage Rise Time 2.9

µs

t

f

Fall Time 3.3

µs

E

off

(**)

Turn-off Switching Loss 15

mJ

t

c

Cross-over Time

V

cc

= 960 V, I

C

= 7 A,

R

GE

= 1K

Ω

, V

GE

= 15 V

Tj = 125 °C

7.5

µs

t

r

(V

off

)

Off Voltage Rise Time 5.5

µs

t

f

Fall Time 6.2

µs

E

off

(**)

Turn-off Switching Loss 22

mJ

Obsolete Product(s) - Obsolete Product(s)

STGD7NB120S-1

STGD7NB120S-1

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