MPSA42,126

DATA SHEET
Product data sheet
Supersedes data of 1999 Apr 12
2004 Oct 11
DISCRETE SEMICONDUCTORS
MPSA42; MPSA43
NPN high-voltage transistors
db
ook, halfpage
M3D186
2004 Oct 11 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors MPSA42; MPSA43
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Video
Telephony
Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA92.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
MPSA42 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
MPSA43
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
MPSA42 300 V
MPSA43 200 V
V
CEO
collector-emitter voltage open base
MPSA42 300 V
MPSA43 200 V
V
EBO
emitter-base voltage open collector 6 V
I
C
collector current (DC) 100 mA
I
CM
peak collector current 200 mA
I
BM
peak base current 100 mA
P
tot
total power dissipation T
amb
25 °C 500 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
ambient temperature 65 +150 °C
2004 Oct 11 3
NXP Semiconductors Product data sheet
NPN high-voltage transistors MPSA42; MPSA43
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
300 µs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current
MPSA42 V
CB
= 200 V; I
E
= 0 A 100 nA
MPSA43 V
CB
= 160 V; I
E
= 0 A 100 nA
I
EBO
emitter-base cut-off current
MPSA42 V
EB
= 6 V; I
C
= 0 A 100 nA
MPSA43 V
EB
= 4 V; I
C
= 0 A 100 nA
h
FE
DC current gain V
CE
= 10 V; note 1
I
C
= 1 mA 25
I
C
= 10 mA 40
I
C
= 30 mA 40
V
CEsat
collector-emitter saturation voltage I
C
= 20 mA; I
B
= 2 mA; note 1 500 mV
V
BEsat
base-emitter saturation voltage I
C
= 20 mA; I
B
= 2 mA; note 1 900 mV
C
c
collector capacitance V
CB
= 20 V; I
E
= i
e
= 0 A; f = 1 MHz
MPSA42 3 pF
MPSA43 4 pF
f
T
transition frequency V
CE
= 20 V; I
C
= 10 mA; f = 100 MHz 50 MHz

MPSA42,126

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS NPN 300V 0.1A SOT54
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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