FDW6923 Rev. D1 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–20 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to25°C
–16
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= –12 V, V
DS
= 0 V –100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= 12 V, V
DS
= 0 V 100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–0.6 –1.0 –1.5 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to25°C
3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –3.5 A
V
GS
= –2.5 V, I
D
= –2.7 A
V
GS
=–4.5 V, I
D
=–3.5A, T
J
=125°C
36
56
49
45
75
72
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –15 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –3.5A 13.2 S
Dynamic Characteristics
C
iss
Input Capacitance 1030 pF
C
oss
Output Capacitance 280 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
120 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 11 20 ns
t
r
Turn–On Rise Time 18 32 ns
t
d(off)
Turn–Off Delay Time 34 55 ns
t
f
Turn–Off Fall Time
V
DD
= –5 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
34 55 ns
Q
g
Total Gate Charge 9.7 16 nC
Q
gs
Gate–Source Charge 2.2 nC
Q
gd
Gate–Drain Charge
V
DS
= –5V, I
D
= –3.5 A,
V
GS
= –4.5 V
2.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.25 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.25 A (Note 2) –0.6 –1.2 V
I
GSSR
Gate–Body Leakage, Reverse V
GS
= 12 V, V
DS
= 0 V 100 nA
Schottky Diode Characteristics
T
J
=25°C
0.6 50
µA
I
R
Reverse Leakage V
R
= 20V
T
J
=125°C
1 8 mA
T
J
=25°C
0.48 0.55 V
V
F
Forward Voltage I
F
= 1A
T
J
=125°C
0.42 0.50 V
C
T
Junction Capacitance V
R
= 10V 50 pF
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
R
θJA
is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW6923
