September 1995 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2GHz.
PINNING
PIN DESCRIPTION
Code: V2
1 base
2emitter
3 collector
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter 20 V
V
CEO
collector-emitter voltage open base 10 V
I
C
DC collector current 50 mA
P
tot
total power dissipation up to T
s
=118 C; note 1 300 mW
h
FE
DC current gain I
C
=15 mA; V
CE
=5 V; T
j
=25 C60 100
f
T
transition frequency I
C
=15 mA; V
CE
=8 V; f =2 GHz;
T
amb
=25 C
8 GHz
G
UM
maximum unilateral power gain I
c
=15 mA; V
CE
=8 V; f =1 GHz;
T
amb
=25 C
13 dB
F noise figure I
c
=5 mA; V
CE
=8 V; f=1 GHz 1.3 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 20 V
V
CEO
collector-emitter voltage open base 10 V
V
EBO
emitter-base voltage open collector 2.5 V
I
C
DC collector current 50 mA
P
tot
total power dissipation up to T
s
=118 C; note 1 300 mW
T
stg
storage temperature 65 150 C
T
j
junction temperature 175 C
