M27W512 DC and AC parameters
13/22
Table 6. Capacitance
Symbol Parameter Test condition
(1)(2)
Min Max Unit
C
IN
Input capacitance V
IN
= 0V 6 pF
C
OUT
Output capacitance V
OUT
= 0V 12 pF
1. T
A
= 25°C, f = 1MHz
2. Sampled only, not 100% tested.
Table 7. Read mode DC characteristics
Symbol Parameter Test condition
(1)
Min Max Unit
I
LI
Input leakage current 0V
V
IN
V
CC
±10 µA
I
LO
Output leakage current 0V V
OUT
V
CC
±10 µA
I
CC
Supply current
E
= V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
V
CC
3.6V
15 mA
I
CC1
Supply current (Standby) TTL E = V
IH
1mA
I
CC2
Supply current (Standby) CMOS
E > V
CC
– 0.2V,
V
CC
3.6V
15 µA
I
PP
Program current V
PP
= V
CC
10 µA
V
IL
Input low voltage –0.6 0.2 V
CC
V
V
IH
(2)
Input high voltage 0.7 V
CC
V
CC
+ 0.5 V
V
OL
Output low voltage I
OL
= 2.1mA 0.4 V
V
OH
Output high voltage TTL I
OH
= –1mA 2.4 V
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Obsolete Product(s) - Obsolete Product(s)
DC and AC parameters M27W512
14/22
Figure 6. Read mode AC waveforms
Table 8. Read mode AC characteristics
Symbol Alt Parameter
Test
condition
(1)
M27W512
Unit
-70
(2)
-80
(2)
-100
V
CC
= 3.0 to
3.6V
V
CC
= 2.7 to
3.6V
V
CC
= 2.7 to
3.6V
Min Max Min Max Min Max
t
AVQV
t
ACC
Address valid to
output valid
E = V
IL
,
G = V
IL
70 80 100 ns
t
ELQV
t
CE
Chip Enable low to
output valid
G
= V
IL
70 80 100 ns
t
GLQV
t
OE
Output Enable low to
output valid
E
= V
IL
40 50 60 ns
t
EHQZ
(3)
t
DF
Chip Enable high to
output Hi-Z
G
= V
IL
0 40 0 50 60 ns
t
GHQZ
(3)
t
DF
Output Enable high to
output Hi-Z
E
= V
IL
0 40 0 50 60 ns
t
AXQX
t
OH
Address transition to
output transition
E = V
IL
,
G = V
IL
00 ns
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Speed obtained with High Speed AC measurement conditions.
3. Sampled only, not 100% tested.
AI00735B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Obsolete Product(s) - Obsolete Product(s)
M27W512 DC and AC parameters
15/22
Table 9. Programming mode DC characteristics
Symbol Parameter Test condition
(1)(2)
Min Max Unit
I
LI
Input leakage current V
IL
V
IN
V
IH
±10 µA
I
CC
Supply current 50 mA
I
PP
Program current E = V
IL
50 mA
V
IL
Input low voltage –0.3 0.8 V
V
IH
Input high voltage 2 V
CC
+ 0.5 V
V
OL
Output low voltage I
OL
= 2.1mA 0.4 V
V
OH
Output high voltage TTL I
OH
= –1mA 3.6 V
V
ID
A9 voltage 11.5 12.5 V
1. T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V
2. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Margin mode AC characteristics
Symbol Alt Parameter Test condition
(1)(2)
Min Max Unit
t
A9HVPH
t
AS9
V
A9
high to V
PP
high 2 µs
t
VPHEL
t
VPS
V
PP
high to Chip Enable low 2 µs
t
A10HEH
t
AS10
V
A10
high to Chip Enable high (set) 1 µs
t
A10LEH
t
AS10
V
A10
low to Chip Enable high (reset) 1 µs
t
EXA10X
t
AH10
Chip Enable transition to V
A10
transition 1 µs
t
EXVPX
t
VPH
Chip Enable transition to V
PP
transition 2 µs
t
VPXA9X
t
AH9
V
PP
transition to V
A9
transition 2 µs
1. T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V
2. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Obsolete Product(s) - Obsolete Product(s)

M27W512-100K6TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EEPROM 512 KBIT Low Volt OTP
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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