RFM04U6P
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
RFM04U6P
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
• Output power: P
O
= 4.3W (typ)
• Gain: G
P
= 13.3dB (typ)
• Drain efficiency: η
D
= 70% (typ)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
16 V
Gain-source voltage V
GSS
3 V
Drain current I
D
2 A
Power dissipation P
D
(Note 1) 7 W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−45 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 0.4 mm glass epoxy PCB with heat sink)
Marking
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
Unit: mm
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1D
Weight: 0.05 g (typ.)
PW-Mini
1
Ｗ Ｆ
23
1. Gate
2. Source
3. Drain
Part No. (or abbreviation code)
Lot No.
Start of commercial production
2009-12
