Document Number: 89177 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Dec-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.58 V at I
F
= 2.5 A
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
New Product
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
200 V
I
FSM
80 A
V
F
at I
F
= 5.0 A 0.65 V
T
J
max. 150 °C
1
2
3
1
K
2
3
1
2
K
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
1
2
3
TO-220AB
TO-263AB TO-262AA
ITO-220AB
VT10200C
VFT10200C
VIT10200CVBT10200C
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
10.0
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
80 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
E
AS
30 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C