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VT10200C-E3/4W

P1-P3P4-P5
Document Number: 89177 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Dec-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.58 V at I
F
= 2.5 A
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
New Product
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
200 V
I
FSM
80 A
V
F
at I
F
= 5.0 A 0.65 V
T
J
max. 150 °C
1
2
3
1
K
2
3
1
2
K
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
1
2
3
TO-220AB
TO-263AB TO-262AA
ITO-220AB
VT10200C
VFT10200C
VIT10200CVBT10200C
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
10.0
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
80 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
E
AS
30 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89177
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 09-Dec-09
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Device
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
200 (minimum) - V
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.81 -
V
I
F
= 5.0 A 1.10 1.60
I
F
= 2.5 A
T
A
= 125 °C
0.58 -
I
F
= 5.0 A 0.65 0.73
Reverse current per diode
V
R
= 180 V
T
A
= 25 °C
I
R
(2)
1.7 - μA
T
A
= 125 °C 1.8 - mA
V
R
= 200 V
T
A
= 25 °C - 150 μA
T
A
= 125 °C 2.5 10 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT
Typical thermal resistance
per diode
R
θJC
3.5 7.0 3.5 3.5
°C/W
per device 2.5 5.5 2.5 2.5
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT10200C-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VFT10200C-E3/4W 1.72 4W 50/tube Tube
TO-263AB VBT10200C-E3/4W 1.37 4W 50/tube Tube
TO-263AB VBT10200C-E3/8W 1.37 8W 800/reel Tape and reel
TO-262AA VIT10200C-E3/4W 1.44 4W 50/tube Tube
Case Temperature (°C)
Average Forward Rectied Current (A)
12
4
0
25 50 75 100 125
VFT10200C
Mounted on Specic Heatsink
2
10
8
6
0 150
V(B,I)T10200C
Resistive or Inductive Load
0
2
4
7
10
011
Average Forward Current (A)
Average Power Disspation (W)
3
5
9
97531
1
108642
6
8
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Document Number: 89177 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Dec-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
0.1
0.6 1.0
Instantaneous Forward Current (A)
1
1.4
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
20 30 40
50
60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
0.1
0.01
0.001
0.0001
10
1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
1000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)T10200C
Junction to Case
VFT10200C
P1-P3P4-P5

VT10200C-E3/4W

Mfr. #:
Buy VT10200C-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A 200V TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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