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2N7002DW-7-F

P1-P3P4-P5
2N7002DW
Document number: DS30120 Rev. 16 - 2
1 of 5
www.diodes.com
November 2013
© Diodes Incorporated
2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
7.5Ω @ V
GS
= 5V
0.23A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Motor Control
• Power Management Functions
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 5)
Part Number Compliance Case Packaging
2N7002DW-7-F Standard SOT363 3,000/Tape & Reel
2N7002DWQ-7-F Automotive SOT363 3,000/Tape & Reel
2N7002DW-13-F Standard SOT363 10,000/Tape & Reel
2N7002DWQ-13-F Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K72
K72
YM
YM
K72
K72
YM
YM
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2N7002DW
Document number: DS30120 Rev. 16 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
2N7002DW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage
Continuous
V
GSS
±20 V
Pulsed
V
GSS
±40 V
Continuous Drain Current (Note 7) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +100°C
I
D
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 7)
I
S
0.53 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
0.8 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.31
W
T
A
= +70°C
0.2
T
A
= +100°C
0.12
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
410 °C/W
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
0.4
W
T
A
= +70°C
0.25
T
A
= +100°C
0.15
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θ
JA
318 °C/W
Thermal Resistance, Junction to Case (Note 7) Steady state
R
θ
JC
135 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
1.0
⎯
2.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS (ON)
⎯
3.2
4.4
7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
(
ON
)
0.5 1.0
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
V
SD
⎯
0.78 1.5 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
11 25 pF
Reverse Transfer Capacitance
C
rss
⎯
2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t
D
(
on
)
⎯
7.0 20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V,
R
GEN
= 25Ω
Turn-Off Delay Time
t
D(off)
⎯
11.0 20
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7.
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 16 - 2
3 of 5
www.diodes.com
November 2013
© Diodes Incorporated
2N7002DW
0
0.2
0.4
0.6
0.8
1.0
0
123
45
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J
°
V = 5.0V, I
GS D
= 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 1012141618
R, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
V , DRAIN-SOURCE VOLTAGE (V)
Figure 5 SOA, Safe Operation Area
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T = 150°C
T = 25°C
Single Pulse
J(max)
A
0.001
0.01
0.1
1
0.1 1 10 100
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P1-P3P4-P5

2N7002DW-7-F

Mfr. #:
Buy 2N7002DW-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V 200mW
Lifecycle:
New from this manufacturer.
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