OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTR4501NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 15
1 Publication Order Number:
NTR4501N/D
NTR4501N, NVR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
3.2 A
T
A
= 85°C 2.4 A
Steady State Power
Dissipation (Note 1)
Steady State P
D
1.25 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
10.0 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1)
R
q
JA
100
°C/W
Junction−to−Ambient (Note 2)
R
q
JA
300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
20 V
88 mW @ 2.5 V
70 mW @ 4.5 V
R
DS(on)
Typ
3.6 A
I
D
Max
(Note 1)
V
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
N−Channel
3.1 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR4501NT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
TR1 = Device Code for NTR4501N
VR1 = Device Code for NVR4501N
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
xR1 MG
G
www.onsemi.com
NVR4501NT1G 3000 / Tape & Ree
l
SOT−23
(Pb−Free)
NTR4501N, NVR4501N
www.onsemi.com
2
Electrical Characteristics (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20 24.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
22 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V T
J
= 25°C 1.5
mA
V
DS
= 16 V T
J
= 85°C 10
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.65 1.2 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
−2.3 mV/°C
Drain−to−Source On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 3.6 A 70 80
mW
V
GS
= 2.5 V, I
D
= 3.1 A 88 105
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 3.6 A 9 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
200
pF
Output Capacitance C
oss
80
Reverse Transfer Capacitance C
rss
50
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 3.6 A
2.4 6.0
nC
Gate−to−Source Gate Charge Q
GS
0.5
Gate−to−Drain Charge Q
GD
0.6
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 3.6 A, R
G
= 6.0 W
6.5 13
ns
Rise Time t
r
12 24
Turn−Off Delay Time t
d(off)
12 24
Fall Time t
f
3 6
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
SD
= 1.6 A 0.8 1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V,
d
IS
/d
t
= 100 A/ms,
I
S
= 1.6 A
7.1
ns
Charge Time t
a
5
Discharge Time t
b
1.9
Reverse Recovery Charge Q
RR
3.0 nC
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4501N, NVR4501N
www.onsemi.com
3
V
DS
≥ 10 V
V
GS
= 1.8 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
012345678910
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics
V
GS
= 10 V
V
GS
= 1.6 V
V
GS
= 1.4 V
V
GS
= 3.0 V
V
GS
= 2.0 V
T
J
= 25°C
8
0.5 1.0 1.5 2.0 2.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.25
123 6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
= 3.2 A
T
J
= 25°C
0.05
0.06
0.07
0.08
0.09
23456
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.4
−50 −25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
I
D
= 3.2 A
V
GS
= 4.5 V
1.0
10
1000
2 6 10 14 18
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
DSS
, LEAKAGE (nA)
V
GS
= 2.5 V
V
GS
= 4.5 V
150
V
GS
= 2.2 V
V
GS
= 1.2 V
6
5
4
3
2
1
0
0.20
0.15
0.10
0.05
45
0.10
T
J
= 25°C
1.2
1.0
0.8
0.6
2012 1648
7
P1-P3P4-P5

NTR4501NT1G

Mfr. #:
Buy NTR4501NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 3.2A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet