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BLF6G10LS-200R,112

P1-P3P4-P6P7-P9P10-P10
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features
n Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 1400 mA:
u Average output power = 40 W
u Power gain = 20 dB
u Efficiency = 27.5 %
u ACPR = −40 dBc
n Easy power control
n Integrated ESD protection
n Enhanced ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (800 MHz to 1000 MHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008 Preliminary data sheet
Table 1. Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation f V
DS
P
L(AV)
G
p
η
D
ACPR
(MHz) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 869 to 894 28 40 20 27.5 −40
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G10LS-200R_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 21 January 2008 2 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
1.3 Applications
n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Symbol
1 drain
2 gate
3 source
[1]
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G10LS-200R - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 65 V
V
GS
gate-source voltage −0.5 +13 V
I
D
drain current - 49 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-case)
thermal resistance from junction to case T
case
=80°C; P
L
= 40 W 0.35 K/W
BLF6G10LS-200R_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 21 January 2008 3 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200R is an enhanced rugged device and is capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1400 mA; P
L
= 200 W; f = 894 MHz.
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)DSS
drain-source breakdown
voltage
V
GS
=0V; I
D
= 0.9 mA 65 - - V
V
GS(th)
gate-source threshold voltage V
DS
=10V;I
D
= 270 mA 1.4 2.0 2.4 V
V
GSq
gate-source quiescent voltage V
DS
= 28 V;
I
D
= 1620 mA
1.7 2.2 2.7 V
I
DSS
drain leakage current V
GS
=0V; V
DS
=28V - - 4.2 µA
I
DSX
drain cut-off current V
GS
=V
GS(th)
+ 3.75 V;
V
DS
=10V
40 48 - A
I
GSS
gate leakage current V
GS
= 11 V; V
DS
= 0 V - - 420 nA
g
fs
forward transconductance V
DS
=10V; I
D
= 9.45 A 11 18 26 S
R
DS(on)
drain-source on-state
resistance
V
GS
=V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
0.012 0.07 0.093 Ω
C
rs
feedback capacitance V
GS
=0V; V
DS
=28V;
f= 1MHz
-3-pF
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz;
RF performance at V
DS
=28V; I
Dq
= 1400 mA; T
case
=25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
P
L(AV)
average output power - 40 - W
G
p
power gain P
L(AV)
= 40 W 19 20 21 dB
IRL input return loss P
L(AV)
= 40 W - −6.7 −5.0 dB
η
D
drain efficiency P
L(AV)
= 40 W 25 27.5 - %
ACPR adjacent channel power ratio P
L(AV)
= 40 W - −40.5 −38.0 dBc
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BLF6G10LS-200R,112

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