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VS-20CTQ150STRLPBF

P1-P3P4-P6P7-P8
VS-20CTQ150SPbF, VS-20CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
1
Document Number: 94490
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
2 x 10 A
V
R
150 V
V
F
at I
F
0.66 V
I
RM
max. 5.0 mA at 125 °C
T
J
max. 175 °C
E
AS
1.0 mJ
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
TO-263AB (D
2
PAK) TO-262AA
Base
common
cathode
A
node Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-20CTQ150SPbF
VS-20CTQ150-1PbF
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
150 V
I
FSM
t
p
= 5 μs sine 1030 A
V
F
10 A
pk
, T
J
= 125 °C (per leg) 0.66 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-20CTQ150SPbF
VS-20CTQ150-1PbF
UNITS
Maximum DC reverse voltage V
R
150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 154 °C, rectangular waveform
10
A
per device 20
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated V
RRM
applied
1030
10 ms sine or 6 ms rect. pulse 180
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-20CTQ150SPbF, VS-20CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
2
Document Number: 94490
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
10 A
T
J
= 25 °C
0.80 0.88
V
20 A 0.90 1.0
10 A
T
J
= 125 °C
0.63 0.66
20 A 0.73 0.77
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3.0 25 μA
T
J
= 125 °C 2.7 5.0 mA
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C - 280 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body - 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation
2.0
°C/W
per package 1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(Only for TO-262)
0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK 20CTQ150S
Case style TO-262 20CTQ150-1
VS-20CTQ150SPbF, VS-20CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
3
Document Number: 94490
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2
1.4
1.6
1.8
2.0
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80
160
100 120 140
0
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
8040 120
160
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P8

VS-20CTQ150STRLPBF

Mfr. #:
Buy VS-20CTQ150STRLPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS20CTQ150STRLM3
Lifecycle:
New from this manufacturer.
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