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SI7615DN-T1-GE3

P1-P3P4-P4
SPICE Device Model Si7615DN
www.vishay.com
Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12
1
Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to
10 V gate drive. The saturated output impedance is best fit
at the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding
convergence difficulties of the switched C
gd
model. All
model parameter values are optimized to provide a best fit
to the measured electrical data and are not intended as an
exact physical interpretation of the device.
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
•Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
Note
• This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer
to the appropriate datasheet of the same number for guaranteed specification limits.
D
S
DBD
C
GS
M
1
G
3
R1
M
2
Gx
R
G
C
GD
Gy
ETCV
+
–
SPICE Device Model Si7615DN
www.vishay.com
Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12
2
Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
SIMULATED
DATA
MEASURED
DATA UNIT
Static
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA 0.80 - V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 20 A 0.0034 0.0031
V
GS
= - 4.5 V, I
D
= - 15 A 0.0047 0.0043
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 20 A 57 70 S
Diode Forward Voltage
a
V
SD
I
S
= - 4 A - 0.69 - 0.68 V
Dynamic
b
Input Capacitance C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
6060 6000
pF Output Capacitance C
oss
766 780
Reverse Transfer Capacitance C
rss
412 820
Total Gate Charge Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 10 A 107 122
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 10 A
54 62
Gate-Source Charge Q
gs
9.4 9.4
Gate-Drain Charge Q
gd
17.2 17.2
SPICE Device Model Si7615DN
www.vishay.com
Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12
3
Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
COMPARISON OF MODEL WITH MEASURED DATA (T
J
= 25 °C, unless otherwise noted)
Note
• Dots and squares represent measured data.
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
R
DS(on)
- On-Resistance (Ω)
0
16
32
48
64
80
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
= 10 V, 6 V, 5 V, 4 V, 3 V
V
GS
= 2 V
0
2
4
6
8
10
0.0 0.6 1.2 1.8 2.4 3.0
T
J
= 125 °C
T
J
= 25 °C
T
J
= - 55 °C
0.000
0.004
0.008
0.012
0.016
0.020
01632486480
V
GS
= 4.5 V
V
GS
= 10 V
0
1700
3400
5100
6800
8500
0 5 10 15 20
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 25 50 75 100 125
V
DS
= 20 V
V
DS
= 15 V
I
D
= 10 A
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
T
J
= 150 °C
T
J
= 25 °C
P1-P3P4-P4

SI7615DN-T1-GE3

Mfr. #:
Buy SI7615DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3
Lifecycle:
New from this manufacturer.
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