IRF630 - IRF630FP Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 200 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ) 200 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 9 9
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100°C 5.7 5.7
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 36 36
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 75 30 W
Derating factor 0.6 0.24 W/°C
dv/dt
(3)
3. ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope 5 V/ns
V
ISO
Insulation winthstand voltage (DC) -- 2000 V
T
J
T
stg
Operating junction temperature
Storage temperature
-65 to 150
150
°C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case Max 1.67 4.17 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 °C/W
Rthc-sink Thermal resistance case-sink typ 0.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
9A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
160 mJ
