375-501N21A-00 Datasheet 375-501N21A-00 | P1-P3

DE375-501N21A

RF Power MOSFET

V

DSS

= 500 V

I

D25

= 25 A

R

DS(on)

=

0.35 Ω

ΩΩ

Ω

P

DC

= 940 W

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

500 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ

500 V

V

GS

Continuous

±20 V

V

GSM

Transient

±30 V

I

D25

T

c

= 25°C

25 A

I

DM

T

c

= 25°C, pulse width limited by T

JM

150 A

I

AR

T

c

= 25°C

21 A

E

AR

T

c

= 25°C

30 mJ

dv/dt

I

S

≤ I

DM

, di/dt ≤ 100A/µs, V

DD

≤ V

DSS

,

T

j

≤ 150°C, R

G

= 0.2Ω

5 V/ns

I

S

= 0

>200 V/ns

P

DC

940 W

P

DHS

T

c

= 25°C

Derate 3.7W/°C above 25°C

425 W

P

DAMB

T

c

= 25°C

4.5 W

R

thJC

0.16 C/W

R

thJHS

0.36 C/W

Symbol Test Conditions Characteristic Values

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 3 ma

500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µa

3.5 4.6 5.5 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0

±100 nA

I

DSS

V

DS

= 0.8 V

DSS

T

J

= 25°C

V

GS

= 0 T

J

= 125°C

50

1

µA

mA

R

DS(on)

V

GS

= 15 V, I

D

= 0.5I

D25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

0.35

Ω

g

fs

V

DS

= 100 V, I

D

= 0.5I

D25

, pulse test

6.5 7.6 9.0 S

T

J

-55 +175 °C

T

JM

175 °C

T

stg

-55 +175 °C

T

L

1.6mm (0.063 in) from case for 10 s

300 °C

Weight

3 g

T

J

= 25°C unless otherwise specified

Features

•

Isolated Substrate

−

high isolation voltage (>2500V)

−

excellent thermal transfer

−

Increased temperature and power

cycling capability

•

IXYS advanced low Q

g

process

•

Low gate charge and capacitances

−

easier to drive

−

faster switching

•

Low R

DS(on)

•

Very low insertion inductance (<2nH)

•

No beryllium oxide (BeO) or other haz-

ardous materials

Advantages

•

Optimized for RF and high speed

switching at frequencies to 50MHz

•

Easy to mount—no insulators needed

•

High power density

♦

N-Channel Enhancement Mode

♦

Low Q

g

and R

g

♦

High dv/dt

♦

Nanosecond Switching

♦

50MHz Maximum Frequency

DRAIN

SG1 SG2

GATE

SD1 SD2

DE375-501N21A

RF Power MOSFET

Symbol Test Conditions Characteristic Values

(

T

J

= 25°C unless otherwise specified

)

min. typ. max.

R

G

0.3

Ω

C

iss

2500 pF

C

oss

V

GS

= 0 V, V

DS

= 0.8 V

DSS(max)

,

f = 1 MHz

170 pF

C

rss

46 pF

C

stray

Back Metal to any Pin

33 pF

T

d(on)

5 ns

T

on

V

GS

= 15 V, V

DS

= 0.8 V

DSS

I

D

= 0.5 I

DM

R

G

= 0.2 Ω (External)

3 ns

T

d(off)

5 ns

T

off

8 ns

Q

g(on)

70 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

I

D

= 0.5 I

D25

18 nC

Q

gd

40 nC

Source-Drain Diode Characteristic Values

(

T

J

= 25°C unless otherwise specified

)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V

21 A

I

SM

Repetitive; pulse width limited by T

JM

150 A

V

SD

1.5 V

T

rr

200 ns

I

F

= I

S

, V

GS

= 0 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2%

Q

RM

I

F

= I

S

, -di/dt = 100A/µs,

V

R

= 100V

0.6

µC

I

RM

15 A

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508

5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715

5,381,025 5,640,045

For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical

note on the IXYSRF web site at;

http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf

CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.

Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-

lished in this document at any time and without notice.

DE375-501N21A

RF Power MOSFET

V

DS

vs.

Capacitance

1

10

100

1000

10000

0 50 100 150 200 250 300 350 400

V

DS

Voltage

Capacitance (pF)

Gate Charge vs. Gate-to-Source Voltage

V

DS

= 250V, I

D

= 12.5A

0

2

4

6

8

10

12

14

16

0 10 20 30 40 50 60 70 80 90 100 110

Gate Charge (nC)

Gate-to-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 100V, PW = 40uS

0

15

30

45

60

75

90

5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

V

GS

, Gate-to Source Voltage (V)

I

D

, Drain Current (A)

Typical Output Characteristics

0

15

30

45

0 25 50 75 100 125

V

DS

, Drain-to-Source Voltage

I

D

, Drain Currnet (A)

Extended Typical Output Characteristics

0

15

30

45

60

75

90

0 25 50 75 100 125

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Currnet (A)

Fig. 1

Fig. 3

Fig. 4

Fig. 2

Fig. 5

Top 10V

9V

8.5V

8V

7.5V

7V

6.5V

Bottom 6V

Top 10V

9V

8.5V

8V

7.5V

7V

6.5V

Bottom 6V

C

rss

C

oss

C

iss

375-501N21A-00

375-501N21A-00

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