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IRFZ48VPBF

P1-P3P4-P6P7-P8
IRFZ48VPbF
HEXFET
®
Power MOSFET
09/22/10
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 72
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 51 A
I
DM
Pulsed Drain Current 290
P
D
@T
C
= 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 166 mJ
I
AR
Avalanche Current 72 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.0
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 60V
R
DS(on)
= 12mΩ
I
D
= 72A
S
D
G
TO-220AB
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
l Lead-Free
PD - 94992A
IRFZ48VPbF
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 2.0 V T
J
= 25°C, I
S
= 72A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 70 100 ns T
J
= 25°C, I
F
= 72A
Q
rr
Reverse Recovery Charge ––– 155 233 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
72
290
A
Starting T
J
= 25°C, L = 64µH
R
G
= 25Ω, I
AS
= 72A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 72A, di/dt ≤ 151A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 12.0 mΩ V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 35 ––– ––– S V
DS
= 25V, I
D
= 43A
––– ––– 25
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 110 I
D
= 72A
Q
gs
Gate-to-Source Charge ––– ––– 29 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 36 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 7.6 ––– V
DD
= 30V
t
r
Rise Time ––– 200 ––– I
D
= 72A
t
d(off)
Turn-Off Delay Time ––– 157 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 166 ––– R
D
= 0.34Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1985 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 496 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRFZ48VPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
72A
1
10
100
1000
4 6 8 10 12 14
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
P1-P3P4-P6P7-P8

IRFZ48VPBF

Mfr. #:
Buy IRFZ48VPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 60V 72A 12mOhm 73.3nC
Lifecycle:
New from this manufacturer.
Delivery:
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