BTA26-600BRG Datasheet BTA24-800CWRG, BTA24-600BWRG, BTB24-600BWRG | P1-P3

July 2007 Rev 10 1/12

12

BTA24, BTB24, BTA25

BTA26, BTB26, T25

25 A standard and Snubberless™ triacs

Features

■ High current triac

■ Low thermal resistance with clip bonding

■ High commutation (4 quadrant) or very high

commutation (3 quadrant) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS (2002/95/EC) compliant

Applications

Applications include the ON/OFF function in

applications such as static relays, heating

regulation, induction motor starting circuits, etc.,

or for phase control operation in light dimmers,

motor speed controllers, and silmilar.

The snubberless versions (BTA/BTB...W and T25

series) are especially recommended for use on

inductive loads, due to their high commutation

performances. The BTA series provides an

insulated tab (rated at 2500 V

RMS

).

Description

Available either in through-hole or surface-mount

packages, the BTA24, BTB24, BTA25, BTA26,

BTB26 and T25 triac series is suitable for general

purpose mains power AC switching.

TM: Snubberless is a trademark of STMicroelectronics

D

2

PAK

(T25)

RD91

(BTA25)

TOP3 Insulated

(BTA26)

TO-220AB Insulated

(BTA24)

TO-220AB

(BTB24)

G

A2

A1

G

A2

A1

A2

A1

G

A2

A1

G

A2

A1

A2

G

A1

TOP3

(BTB26)

G

A2

A1

A2

Table 1. Device summary

Symbol Parameter BTA24

(1)

1. Insulated packages

BTB24 BTA25

(1)

BTA26

(1)

BTB26 T25 Unit

I

T(RMS)

RMS on-state

current

25 25 25 25 25 25 A

V

DRM

/V

RRM

Repetitive peak

off-state voltage

600 / 800 600 / 800 600 / 800 600

(2)

/ 800

2. 600 V version available only with I

GT

= 50 mA (Snubberless and Standard)

600 600 / 800 V

I

GT

(Snubberless)

Triggering gate

current

35 / 50 35 / 50 50 35 / 50 - 35 mA

I

GT

(Standard)

Triggering gate

current

-50505050-mA

www.st.com

Characteristics BTA24, BTB24, BTA25, BTA26, BTB26, T25

2/12

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current (full sine wave)

TOP3 T

c

= 105° C

25 A

D

2

PAK /

TO-220AB

T

c

= 100° C

RD91 Ins/

TOP3 Ins.

T

c

= 100° C

TO-220AB Ins. T

c

= 75° C

I

TSM

Non repetitive surge peak on-state

current (full cycle, T

j

initial = 25° C)

F = 50 Hz t = 20 ms 250

A

F = 60 Hz t = 16.7 ms 260

I

²

tI

²

t Value for fusing t

p

= 10 ms 340 A

²

s

dI/dt

Critical rate of rise of on-state current

I

G

= 2 x I

GT

, t

r

≤ 100 ns

F = 120 Hz T

j

= 125° C 50 A/µs

V

DSM

/V

RSM

Non repetitive surge peak off-state

voltage

t

p

= 10 ms T

j

= 25° C

V

DRM

/V

RRM

+ 100

V

I

GM

Peak gate current t

p

= 20 µs T

j

= 125° C 4 A

P

G(AV)

Average gate power dissipation T

j

= 125° C 1 W

T

stg

T

j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

° C

Table 3. Electrical characteristics (T

j

= 25° C, unless otherwise specified), Snubberless and

logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W

Symbol Test Conditions Quadrant

T25 BTA/BTB

Unit

T2535 CW BW

I

GT

(1)

V

D

= 12 V R

L

= 33 Ω

I - II - III MAX. 35 35 50 mA

V

GT

I - II - III MAX. 1.3 V

V

GD

V

D

= V

DRM

R

L

= 3.3 kΩ

T

j

= 125° C

I - II - III MIN. 0.2 V

I

H

(2)

I

T

= 500 mA MAX. 50 50 75 mA

I

L

I

G

= 1.2 I

GT

I - III

MAX.

70 70 80

mA

II 80 80 100

dV/dt

(2)

V

D

= 67 %V

DRM

gate open T

j

= 125° C MIN. 500 500 1000 V/µs

(dI/dt)c

(2)

Without snubber T

j

= 125° C MIN. 13 13 22 A/ms

1. minimum I

GT

is guaranted at 5% of I

GT

max.

2. for both polarities of A2 referenced to A1.

BTA24, BTB24, BTA25, BTA26, BTB26, T25 Characteristics

3/12

Table 4. Electrical characteristics (T

j

= 25° C, unless otherwise specified),

standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B

Symbol Test Conditions Quadrant Value Unit

I

GT

(1)

V

D

= 12 V R

L

= 33 Ω

I - II - III

MAX.

50

mA

IV 100

V

GT

ALL MAX. 1.3 V

V

GD

V

D

= V

DRM

R

L

= 3.3 kΩ T

j

= 125° C ALL MIN. 0.2 V

I

H

(2)

)I

T

= 500 mA MAX. 80 mA

I

L

I

G

= 1.2 I

GT

I - III - IV

MAX.

70

mA

II 160

dV/dt

(2)

V

D

= 67 %V

DRM

gate open T

j

= 125° C MIN. 500 V/µs

(dV/dt)c

(2)

(dI/dt)c = 13.3 A/ms T

j

= 125° C MIN. 10 V/µs

1. minimum I

GT

is guaranted at 5% of I

GT

max.

2. for both polarities of A2 referenced to A1.

Table 5. Static characteristics

Symbol Test Conditions Value Unit

V

TM

(1)

I

TM

= 35 A t

p

= 380 µs T

j

= 25° C MAX. 1.55 V

V

t0

(1)

Threshold voltage T

j

= 125° C MAX. 0.85 V

R

d

(1)

Dynamic resistance T

j

= 125° C MAX. 16 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

T

j

= 25° C

MAX.

5µA

T

j

= 125° C 3 mA

1. for both polarities of A2 referenced to A1.

Table 6. Thermal resistance

Symbol Parameter Value Unit

R

th(j-c)

Junction to case (AC)

TOP 3 0.6

° C/W

D

2

PAK / TO-220AB 0.8

RD91 Insulated / TOP3 Insulated 0.9

TO-220AB Insulated 1.7

R

th(j-a)

Junction to ambient

(1)

S = 1 cm

²

D

2

PA K 4 5

° C/WTOP3 / TOP3 Insulated 50

TO-220AB / TO-220AB Insulated 60

1. S = Copper surface under tab.

BTA26-600BRG

BTA26-600BRG

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