CDNBS08-T58CC

Features
Protects four lines
Unidirectional
24 A peak surge current
RoHS compliant*
Applications
PoE power protection
DC power supply protection
CDNBS08-T58CC - Common Cathode TVS Diode
*RoHS COMPLIANT
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
General Information
The Model CDNBS08-T58CC is designed to protect the power section in Power over
Ethernet (PoE) applications. The device is packaged in an eight lead narrow body
SOIC package. Bourns
®
Chip Diodes are available in surface mount packages and are
easy to handle using standard pick and place equipment.
In addition to surge protection, the device provides Level 4 ESD protection per
IEC 61000-4-2.
8 7 6 5
1 2 3 4
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Breakdown Voltage @ 1 mA V
BR
I
BR
= 1 mA 64.4 68 71.2 V
V
BR
Temperature Coeffi cient V
BR
I
BR
= 1 mA 0.1 %/°C
Leakage Current I
R
V
R
= V
WM
T
A
= 25 °C 200 nA
T
A
= 85 °C 1 µA
Capacitance C V
R
= -44 V, f = 1 MHz, 30 mV rms 55 pF
Clamping Voltage V
C
I
PP
= 24 A (8/20 µs) 100 V
Forward Voltage V
F
I
F
= 1 A, T
W
= 100 µs 1 V
Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Value Unit
Peak Pulse Current (8/20 µs) I
PP
24 A
Peak Pulse Power (8/20 µs) P
PP
2700 W
Working Peak Reverse Voltage V
WM
58 V
IEC 61000-4-2 Contact Discharge
ESD
30 kV
Junction Temperature T
J
-55 to +150 °C
Storage Temperature T
STG
-65 to +150 °C
Device Pinout
Pin Function
1 ANODE 1
2 GND
3 GND
4 ANODE 2
5 ANODE 3
6 GND
7 GND
8 ANODE 4
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EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
3312 - 2 mm SMD Trimming Potentiometer
0.01
0.1
050
75 100 125 150
I
R
(nA)
Junction Temperature (°C)
1
10
100
1000
10
100
44 46 48 50 52 54 56 58
Capacitance (pF)
V
R
(V)
f = 1 MHz
V
OSC
= 30 mV rms
0.1
1
100
60 70
80 90
Current (A)
V
C
Clamping Voltage (V)
10
0.1
1
100
0 0.5
1.0 1.5 2.0 2.5 3.0 3.5
I
F
Forward Current (A)
V
F
Forward Voltage (V)
10
V
R
= 58 V
8/20 µs Waveform8/20 µs Waveform
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
CDNBS08-T58CC - Common Cathode TVS Diode
Typical Leakage vs. Junction Temperature
Typical Clamping Voltage vs. Current
Typical Capacitance vs. Reverse Voltage
Typical Forward Voltage vs. Forward Current
3312 - 2 mm SMD Trimming Potentiometer
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
CDNBS08-T58CC - Common Cathode TVS Diode
Product Dimensions
This is an RoHS compliant molded JEDEC narrow body SO-8
package with 100 % Sn plating on the lead frame. It weighs
approximately 15 mg and has a fl ammability rating of UL 94V-0.
Recommended Footprint
Typical Part Marking
CDNBS08-T58CC ............................................................... 4T58CC
Dimensions
A
4.80 - 5.00
(0.189 - 0.197)
B
3.81 - 4.00
(0.150 - 0.157)
C
5.80 - 6.20
(0.228 ± 0.244)
D
0.36 - 0.51
(0.014 - 0.020)
E
1.35 - 1.75
(0.053 - 0.069)
F
0.102 - 0.203
(0.004 - 0.008)
G
0.25 - 0.50
(0.010 - 0.020)
H
0.51 - 1.12
(0.020 - 0.044)
I
0.190 - 0.229
(0.0075 - 0.0090)
J
4.60 - 5.21
(0.181 - 0.205)
K
0.28 - 0.79
(0.011 - 0.031)
L
1.27
(0.050)
AB
C
D
E
A
B
C
G
45 °
NOM.
I
H
D
K
L
MILLIMETERS
(INCHES)
DIMENSIONS =
E
F
J
7 ° NOM.
3 PLCS.
7 ° NOM.
4 PLCS.
4 °
± 4 °
Dimensions
A
1.27
(0.050)
B
0.51
(0.020)
C
6.80
(0.268)
D
4.20
(0.165)
E
1.30
(0.051)
How to Order
CD NBS08 - T 58 CC
Common Code
Chip Diode
Package
NBS08 = Narrow Body SOIC8 Package
Model
T = Transient Voltage Suppressor
Working Peak Reverse Voltage
58 = 58 VDC
Suffi x
CC = Common Cathode Confi guration

CDNBS08-T58CC

Mfr. #:
Manufacturer:
Bourns
Description:
TVS Diodes / ESD Suppressors 58VDC 30KV 24A TVS Diode Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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