1N4454
Vishay Semiconductors
formerly General Semiconductor
Document Number 88110 www.vishay.com
13-May-02 1
Small-Signal Diode
Reverse Voltage 100V
Forward Current 150mA
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Maximum Ratings and Thermal Characteristics(T
A
= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Reverse voltage V
R
75 V
Peak reverse voltage V
RM
100 V
Maximum average rectified current half wave rectification
I
F(AV)
150 mA
with resistive load at T
amb
= 25°C and f ≥ 50Hz
(1)
Surge forward current at t < 1s and T
j
= 25°CI
FSM
500 mA
Maximum power dissipation at T
amb
= 25°C
(1)
P
tot
500 mW
Thermal resistance junction to ambient air
(1)
R
θJA
350 °C/W
Maximum junction temperature T
J
175 °C
Storage temperature range T
S
–65 to +175 °C
Electrical Characteristics(T
A
= 25°C unless otherwise noted)
Parameter Symbol Min. Max. Unit
Maximum forward voltage drop at I
F
= 10mA V
F
– 1.0 V
Leakage current at V
R
= 50V
I
R
–
100 nA
at V
R
= 75V 5 µA
Reverse breakdown voltage tested with 100µA pulses V
(BR)R
100 – V
Capacitance at V
F
= V
R
= 0V C
tot
– 2pF
Reverse recovery time
t
rr
– 4ns
from I
F
= 10mA to I
R
= 1mA, V
R
= 6V, R
L
= 100Ω
Rectification efficiency at f = 100MHz, V
RF
= 2V η
v
0.45 ––
Note:
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
