R07DS0897EJ0300Rev.3.00 Page 1 of 3
Jan 29, 2014
Preliminary Datasheet
RJS6004WDPK
600V - 20A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
1. Anode
2. Cathode
3. Anode
4. Cathode
1
2, 4
3
RENESAS Package code:
PRSS0004ZE-A
(Package name:
TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Maximum reverse voltage V
RM
600 V
Continuous forward current I
F
Note1
10/20 A
Peak surge forward current I
FSM
Note1
60/120 A
Junction to case thermal impedance θj-c 0.9 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Per leg/device
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Forward voltage V
F
Note2
⎯ 1.5 1.8 V I
F
= 10 A
Reverse current I
R
Note1
⎯ ⎯ 10/20 μA V
R
= 600 V
Reverse recovery time t
rr
Note2
⎯ 15 ⎯ ns I
F
= 10 A, di/dt = 300A/μs
Notes: 1. Per leg/device
2. Per leg
R07DS0897EJ0300
Rev.3.00
Jan 29, 2014
