TC7SH86FS
2014-03-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH86FS
2-Input EXCLUSIVE OR Gate
Features
• High speed : t
pd
= 4.8 ns (typ.) at V
CC
= 5V, C
L
=15pF
• Low power dissipation : I
CC
= 2μA (max) at Ta = 25°C
• High noise immunity : V
NIH
= V
NIL
= 28% V
CC
(min)
• 5.5-V tolerant inputs.
• Wide operating voltage range: V
CC
= 2 to 5.5 V
Marking Pin Assignment
(top view)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Supply voltage V
CC
− 0.5 to 7 V
DC input voltage V
IN
− 0.5 to 7 V
DC output voltage V
OUT
− 0.5 to V
CC
+ 0.5 V
Input diode current I
IK
− 20 mA
Output diode current I
OK
± 20 (Note 1) mA
DC output current I
OUT
± 25 mA
DC V
CC
/ground current I
CC
± 50 mA
Power dissipation P
D
50 mW
Storage temperature T
stg
− 65 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
OUT
< GND, V
OUT
> V
CC
(fSV)
Weight : 0.001 g (typ.)
SON5-P-0.35
Product name
H 8
5 V
CC
4 OUT Y
GND 2
IN B 3
IN A 1
Start of commercial production
2003-08
