APT51F50J Datasheet APT51F50J | P1-P3

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

V

oz

g

in·lbf

N·m

Ratings

51

32

230

±30

1580

37

Min Typ Max

480

0.26

0.15

-55 150

2500

1.03

29.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

RMS Voltage

(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)

Package Weight

Terminals and Mounting Screws.

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θ

JC

R

θ

CS

T

J

,T

STG

V

Isolation

W

T

Torque

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low t

rr

for high reliability

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

APT51F50J

500V, 51A, 0.075Ω Max, t

rr

≤310ns

APT51F50J

S

O

T

-2

2

7

IS OTO P

®

file # E145592

"UL Recognized"

G

S

D

N-Channel FREDFET

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

rr

, soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching loss. The

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Microsemi Website - http://www.microsemi.com

050-8127 Rev D 9-2011

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Source-Drain Diode Characteristics

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 2.31mH, R

G

= 25Ω, I

AS

= 37A.

3

Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4

C

o(cr)

is deﬁ ned as a ﬁ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁ ned as a ﬁ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -1.65E-7/V

DS

^2 + 5.51E-8/V

DS

+ 2.03E-10.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

μC

A

V/ns

Min Typ Max

500

0.60

0.064 0.075

2.5 4 5

-10

250

1000

±100

Min Typ Max

55

11600

160

1250

725

365

290

65

130

45

55

120

39

Min Typ Max

51

230

1.0

310

570

1.48

3.85

11.3

16.6

20

Test Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 250μA

V

GS

= 10V, I

D

= 37A

V

GS

= V

DS

, I

D

= 2.5mA

V

DS

= 500V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

V

DS

= 50V, I

D

= 37A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 333V

V

GS

= 0 to 10V, I

D

= 37A,

V

DS

= 250V

Resistive Switching

V

DD

= 333V, I

D

= 37A

R

G

= 2.2Ω

6

, V

GG

= 15V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 37A, T

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

= 37A

3

T

J

= 25°C

V

DD

= 100V T

J

= 125°C

di

SD

/dt = 100A/μs T

J

= 25°C

T

J

= 125°C

I

SD

≤ 37A, di/dt ≤1000A/μs, V

DD

= 333V,

T

J

= 125°C

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁ cient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁ cient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

V

BR(DSS)

∆V

BR(DSS)

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

050-8127 Rev D 9-2011

APT51F50J

V

GS

= 7 & 10V

5.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

6V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 37A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 37A

V

DS

= 400V

V

DS

= 100V

V

DS

= 250V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

6.5V

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0 5 10 15 20 25 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 10 20 30 40 50 60 70 80 0 100 200 300 400 500

0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5

300

250

200

150

100

50

0

2.5

2.0

1.5

1.0

0.5

0

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

140

120

100

80

60

40

20

0

250

200

150

100

50

0

20,000

10,000

1000

100

10

200

180

160

140

120

100

80

60

40

20

0

APT51F50J

050-8127 Rev D 9-2011

APT51F50J

APT51F50J

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