©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
July 2005
FJC2383
NPN Epitaxial Silicon Transistor
Color TV Audio Output & Color TV Vertical Deflection Output
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 160 V
V
CEO
Collector-Emitter Voltage 160 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 1 A
I
B
Base Current 0.5 A
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 150V, I
E
= 0
1 µA
I
EBO
Emitter Cut-off Current V
EB
= 6V, I
C
= 0 1 µA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 160 V
h
FE
DC Current Gain V
CE
= 5V, I
C
= 200mA 100 320
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 1.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 5mA 0.45 0.75 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 200mA 20 100 MHz
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f = 1MHz 20 pF
SOT-89
1
1. Base 2. Collector 3. Emitter
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Weekly code
Marking
