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STD60NF3LLT4

P1-P3P4-P6P7-P9P10-P12P13-P13
July 2006 Rev 2 1/13
13
STD60NF3LL
N-channel 30V - 0.0075Ω - 60A - DPAK
STripFET™ II Power MOSFET
General features
■ Optimal R
DS(ON)
x Q
g
trade-off @ 4.5V
■ Conduction losses reduced
■ Switching losses reduced
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance ang gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STD60NF3LL 60V <0.0095Ω 60A
DPAK
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD60NF3LLT4 D60NF3LL DPAK Tape & reel
Contents STD60NF3LL
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD60NF3LL Electrical ratings
3/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)30V
V
GS
Gate- source voltage ± 16 V
I
D
Drain current (continuous) at T
C
= 25°C 60 A
I
D
Drain current (continuous) at T
C
= 100°C 43 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 240 A
P
tot
Total dissipation at T
C
= 25°C 100 W
Derating Factor 0.67 W/°C
E
AS
(2)
2. Starting Tj=25°C, I
D
=30A, V
DD
=27.5V
Single pulse avalanche energy 700 mJ
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 1.5 °C/W
Rthj-amb Thermal resistance junction-to ambient max 100 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
P1-P3P4-P6P7-P9P10-P12P13-P13

STD60NF3LLT4

Mfr. #:
Buy STD60NF3LLT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 60 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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