2SA1585STPR Datasheet 2SB1424T100R, 2SB1424T100Q, 2SA1585STPR | P1-P3

2SB1424 / 2SA1585S

Transistors

Rev.A 1/3

Low VCE(sat) Transistor (−20V, −3A)

2SB1424 / 2SA1585S

zFeatures

1) Low V

CE(sat).

V

CE(sat) = −0.2V (Typ.)

(I

C/IB = −2A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2150 / 2SC4115S.

zStructure

Epitaxial planar type

PNP silicon transistor

zExternal dimensions (Unit : mm)

3±0.2(15Min.)

4±0.2 2±0.2

0.45

0.5

0.45

5

(1)

(2) (3)

−0.05

+

0.15

+

0.15

−0.05

2.5

+

0.4

−0.1

3Min.

2SA1585S

(1) Emitter

(2) Collector

(3) Base

ROHM : SPT

EIAJ : SC-72

2SB1424

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

±0.3

−0.1

+

0.2

−0.05

+

0.1

+

0.2

−0.1

(3)(2)(1)

4.0

1.0±0.2

0.5±0.1

2.5

3.0±0.2

1.5±0.1

0.4±0.1

0.5±0.1

0.4±0.1

0.4

1.5±0.1

4.5

1.6±0.1

∗

Denotes hFE

Abbreviated symbol: AE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

−20 V

V

A

W

°C

−20

−6

−3

∗

−2

I

CP

A(Pulse)−5

0.5

2SB1424

2SA1585S

0.4

150

−55 to 150

Symbol Limits Unit

∗

Single pulse Pw=10ms

2SA1585S

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

2SB1424 / 2SA1585S

Transistors

Rev.A 2/3

zElectrical characteristics (Ta=25°C)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Min.

−20

−6

−

120

−

240

35

−

−0.1

390

−0.5

−

VI

C

= −50

µ

A

I

C

= −1mA

I

E

= −50

µ

A

V

CB

= −20V

V

EB

= −5V

V

CE

= −2V, I

C

= −0.1A

I

C

/I

B

= −2A/ −0.1A

V

CE

= −2V, I

E

=0.5A, f=100MHz

V

CB

= −10V, I

E

=0A, f=1MHz

V

µ

A

µ

A

−

V

MHz

pF

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

zPackaging specifications and h

FE

TP T100

5000 1000

−

QR

h

FE

QR

2SA1585S

2SB1424

Type

Package

Code

Basic ordering

unit (pieces)

Taping

h

FE values are classified as follows :

Item Q R

h

FE

120 to 270 180 to 390

zElectrical characteristic curves

−1m

−2m

−5m

−0.01

−0.02

−0.05

−0.1

−0.2

−0.5

−1

−2

−5

−10

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.1 Grounded emitter propagation

characteristics

V

CE

= −2V

Ta=100°C

−40°C

25°C

0

−0.4

−0.8

−1.2

−1.6

−2.0

0 −0.2 −0.4 −0.6 −0.8 −1.0

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

−2mA

−6mA

−4mA

Ta=25°C

I

B

=0A

−8mA

−10mA

−20mA

−12mA

−14mA

−16mA

−18mA

Fig.2 Grounded emitter output

characteristics ( )

0

−1

−2

−3

−4

−5

0 −1 −2 −3 −4 −5

COLLECTOR CURRENT : IC

(A)

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Ta=25°C

−20mA

−

25mA

−30mA

−

35mA

−

40mA

−5mA

−15mA

−10mA

IB=0A

−45mA

−50mA

Fig.3 Grounded emitter output

characteristics ( )

2SB1424 / 2SA1585S

Transistors

Rev.A 3/3

−2m −5m −0m

−20m

−50m

−100m

−200m −500m −

1 −2 −5 −10

−1m

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

5k

2k

1k

500

200

100

50

20

10

5

V

CE

= −2V

Ta=100°C

25°C

−40°C

Fig.4 DC current gain vs.

collector current

−2

−2m

−5m

−10m

−20m

−50m

−100m

−200m

−500m

−1

−

2m

−

5m

−

10 m

−

20m

−

50m

−

100m

−

200m

−

500m

−

2

−

1

−

5

−

10

−

1m

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

I

C

/I

B

=10

Ta=100°C

−40°C

25°C

Fig.5 Collector-emitter saturation

voltage vs. collector curren ( )

−2

−2m

−5m

−10m

−20m

−50m

−100m

−200m

−500m

−1

−

2m

−

5m

−

10m

−

20m

−

50m

−

100m

−

200m

−

500m

−

2

−

1

−

5

−

10

−

1m

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

I

C

/I

B

=20

Ta=100°C

−40°C

25°C

Fig.6 Collector-emitter saturation

voltage vs. collector current ( )

EMITTER INPUT CAPACITANCE : C

ib

(pF)

COLLECTOR OUTPUT CAPACITANCE : C

ob

(pF)

EMITTER TO BASE VOLTAGE : V

EB

(V)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

10

20

50

100

200

500

1000

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50

Ta=25°C

f=1MHz

I

E

=0A

I

C

=0A

C

ib

C

ob

Fig.8 Gain bandwidth product vs.

emitter current

Collector output capacitance vs.

collector-base voltage

−2

−2m

−5m

−10m

−20m

−50m

−100m

−200m

−500m

−1

−

2m

−

5m

−

10 m

−

20m

−

50m

−

2

−

1

−

5

−

10

−

1m

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

−

100m

−

200m

−

500m

−40°C

25°C

Ta=100°C

I

C

/I

B

=50

Fig.7 Collector-emitter saturation

voltage vs. collector current ( )

1 2 5 10 20 50 100 200 500 1000

TRANSITION FREQUENCY : f

T

(MHz)

EMITTER CURRENT : I

E

(mA)

1000

500

200

100

50

20

10

5

2

1

Ta=25°C

V

CE

= −2V

Fig.9 Emitter input capacitance vs.

emitter base voltage

2SA1585STPR

2SA1585STPR

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