IRFB17N50LPBF

Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
FEATURES
Low Gate Charge Q
g
results in Simple Drive
Requirement
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
•Low t
rr
and Soft Diode Recovery
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
ZVS and High Frequency Circuit
PWM Inverters
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 3.0 mH, R
g
= 25 , I
AS
= 16 A (see fig. 12).
c. I
SD
16 A, dI/dt 347 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 0.28
Q
g
(Max.) (nC) 130
Q
gs
(nC) 33
Q
gd
(nC) 59
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRFB17N50LPbF
SiHFB17N50L-E3
SnPb
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
16
AT
C
= 100 °C 11
Pulsed Drain Current
a
I
DM
64
Linear Derating Factor 1.8 W/°C
Single Pulse Avalanche Energy
b
E
AS
390 mJ
Repetitive Avalanche Current
a
I
AR
16 A
Repetitive Avalanche Energy
a
E
AR
22 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
220 W
Peak Diode Recovery dV/dt
c
dV/dt 13 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91098
2 S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-0.56
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.6 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 50 μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 2.0 mA
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 9.9 A
b
- 0.28 0.32
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 9.9 A
b
11 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 2760 -
pF
Output Capacitance C
oss
- 325 -
Reverse Transfer Capacitance C
rss
-37-
Output Capacitance C
oss
V
GS
= 0 V V
DS
= 1.0 V , f = 1.0 MHz - 3690 -
V
GS
= 0 V V
DS
= 400 V , f = 1.0 MHz - 84 -
Effective Output Capacitance C
oss
eff. V
GS
= 0 V V
DS
= 0 V to 400 V
c
- 159 -
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 16 A, V
DS
= 400 V,
see fig. 6 and 13
b
- - 130
nC Gate-Source Charge Q
gs
--33
Gate-Drain Charge Q
gd
--59
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 16 A,
R
g
= 7.5 , see fig. 10
b
-21-
ns
Rise Time t
r
-51-
Turn-Off Delay Time t
d(off)
-50-
Fall Time t
f
-28-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--16
A
Pulsed Diode Forward Current
a
I
SM
--64
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C
I
F
= 16 A, dI/dt = 100 A/μs
b
- 170 250
ns
T
J
= 125 °C - 220 330
Body Diode Reverse Recovery Charge Q
rr
T
J
= 25 °C - 470 710
nC
T
J
= 125 °C - 810 1210
Reverse Recovery Current I
RRM
-7.311A
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
Document Number: 91098 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0.1
1
10
100
0.01
0.1
1
10
100
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
To p
Bottom
5.0 V
20 μs PULSE WIDTH
T
J
= 25 °C
I
D
, Drain-to-Source Current (A)
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom
To p
5.0 V
20 μs PULSE WIDTH
T
J
= 125 °C
V
DS
= 50 V
20 μs PULSE WIDTH
T
J
= 25 °C
T
J
= 150 °C
5.0
4.0
7.0
6.0
8.0
9.0
10.0
0.1
1
10
100
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
I
D
= 16 A
V
GS
= 10 V
T
J
, Junction Temperature
R
DS(on)
, Drain-to-Source On Resistance (Normalized)
- 60
- 20
- 40
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0

IRFB17N50LPBF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 500V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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