QSE213 Datasheet QSE213, QSE214 | P1-P3

PACKAGE DIMENSIONS

SCHEMATIC

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213 QSE214

7/23/02

Page 1 of 4

DESCRIPTION

The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic side-

looker package.

FEATURES

• NPN Silicon Phototransistor

• Package Type: Sidelooker

• Medium Reception Angle, 50°

• Daylight Filter

• Black Epoxy Package

• Matching Emitter: QEE213

EMITTER

0.174 (4.44)

0.060 (1.50)

0.030 (0.76)

0.047 (1.20)

0.177 (4.51)

0.224 (5.71)

0.5 (12.7)

MIN

0.020 (0.51)

SQ. (2X)

0.060 (1.52)

0.100 (2.54)

R 0.030 (0.76)

Collector

Emitter

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless

otherwise speciﬁed.

7/23/02

Page 2 of 4

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213 QSE214

NOTES:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA ﬂux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimum from housing.

5.

λ

= 950 nm GaAs.

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise speciﬁed)

Parameter Symbol Rating Unit

Operating Temperature

T

OPR

-40 to +100 °C

Storage Temperature

T

STG

-40 to +100 °C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

Collector-Emitter Voltage

V

CE

30 V

Emitter-Collector Voltage

V

EC

5V

Power Dissipation

(1)

P

D

100 mW

ELECTRICAL / OPTICAL CHARACTERISTICS

(T

A

=25°C unless otherwise speciﬁed)

Parameter Test Conditions Symbol Min Typ Max Units

Peak Sensitivity

λ

PS

— 880 — nM

Reception Angle

Θ

— ±25 — Deg.

Collector Emitter Dark Current

V

CE

= 10 V, E

e

= 0 I

D

——100 nA

Collector Emitter Breakdown

I

C

= 1 mA BV

CEO

30 —— V

Emitter Collector Breakdown

I

E

= 100 µA BV

ECO

5 —— V

On-State Collector Current

E

e

= 0.5 mW/cm

2

, V

CE

= 5 V

(QSE213)

I

C(ON)

0.2 — 1.50

mA

(QSE214) 1.00 ——

Saturation Voltage

V

CE

= 5 V

(5)

E

e

= 0.5 mW/cm

2

,

I

C

= 0.1 mA

(5)

V

CE(SAT)

——0.4 V

Rise Time

V

CC

= 5V, R

L

= 100

Ω

, I

C

= 1mA

t

r

— 8 —

µs

Fall Time

t

f

— 8 —

7/23/02

Page 3 of 4

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213 QSE214

TYPICAL PERFORMANCE CURVES

Fig.2 Radiation Diagram

0

10

20

30

40

50

60

10

1

10

0

10

-1

10

-2

10

-3

V

CE

- COLLECTOR EMITTER VOLTAGE (V)

I

D

- DARK CURRENT (mA)

I

L

- NORMALIZED LIGHT CURRENT

I

L

- NORMALIZED LIGHT CURRENT

Fig.1 Dark Current vs. Collector Emitter Voltage

90

0

10

20

30

40

50

60

70

80

100

110

120

130

140

150

160

180

170

1.0

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.0

0

TA - AMBIENT TEMPERATURE (˚C)

T

A

- AMBIENT TEMPERATURE (˚C) V

CE

- COLLECTOR - EMITTER VOLTAGE (V)

Fig.5

Dark Current vs. Ambient Temperature

40 60 80 100

I

D

- NORMALI

ZED DARK CURRENT

10

-1

10

0

10

1

10

2

10

3

Normalized to:

V

CE

= 25 V

T

A

= 25˚C

V

CE

= 25 V

V

CE

= 10 V

Fig.3

Light Current vs. Ambient Temperature

Fig.4

Light Current vs. Collector to Emitter Voltage

-40 -20 0 20 40 60 80 100

0.1

1

10

Normalized to:

V

CE

= 5 V

I

e

= 0.5 mW/cm

2

T

A

= 25˚C

0.1 1 10

0.001

0.01

0.1

1

10

Normalized to:

V

CE

= 5 V

I

e

= 0.5 mW/cm

2

T

A

= 25˚C

I

e

= 1 mW/cm

2

I

e

= 0.1 mW/cm

2

I

e

= 0.2 mW/cm

2

I

e

= 0.5 mW/cm

2

QSE213

QSE213

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