BYT51K-TR

BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Nov-15
1
Document Number: 86028
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Low reverse current
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Rectification diode
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYT51M BYT51M-TR 5000 per 10" tape and reel 25 000
BYT51M BYT51M-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT51A V
R
= 50 V; I
F(AV)
= 1.5 A SOD-57
BYT51B V
R
= 100 V; I
F(AV)
= 1.5 A SOD-57
BYT51D V
R
= 200 V; I
F(AV)
= 1.5 A SOD-57
BYT51G V
R
= 400 V; I
F(AV)
= 1.5 A SOD-57
BYT51J V
R
= 600 V; I
F(AV)
= 1.5 A SOD-57
BYT51K V
R
= 800 V; I
F(AV)
= 1.5 A SOD-57
BYT51M V
R
= 1000 V; I
F(AV)
= 1.5 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
= repetitive peak reverse voltage
See electrical characteristics
BYT51A V
R
= V
RRM
50 V
BYT51B V
R
= V
RRM
100 V
BYT51D V
R
= V
RRM
200 V
BYT51G V
R
= V
RRM
400 V
BYT51J V
R
= V
RRM
600 V
BYT51K V
R
= V
RRM
800 V
BYT51M V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Repetitive peak forward current I
FRM
9A
Average forward current
l = 10 mm I
F(AV)
1.5 A
On PC board I
F(AV)
1A
Junction and storage temperature range T
j
= T
stg
-55 to +175 °C
Non repetitive reverse avalanche energy l
(BR)R
= 1 A E
R
20 mJ
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Nov-15
2
Document Number: 86028
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 A V
F
- 0.95 1.1 V
I
F
= 1 A, T
j
= 175 °C V
F
--1V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 100 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
--4μs
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949101
ll
T
L
= constant
0.001
0.01
0.1
1
10
0 0.4 0.8 1.2 1.6 2.0
16323
V
F
- Forward Voltage (V)
I
F
- Forward Current (A)
T
j
= 175 °C
T
j
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20 40 60 80 100 120 140 160 180
16324
T
amb
- Ambient Temperature (°C)
I
FAV
- Average Forward Current (A)
R
thJA
= 45 K/W
l = 10 mm
R
thJA
= 100 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150 175
16325
T
j
- Junction Temperature (°C)
I
R
- Reverse Current (μA)
V
R
= V
RRM
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Nov-15
3
Document Number: 86028
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
16326
T
j
- Junction Temperature (°C)
P
R
- Reverse Power Dissipation (mW)
V
R
= V
RRM
P
R
- Limit at 100 % V
R
P
R
- Limit at 80 % V
R
0
5
10
15
20
25
30
35
40
45
16327
0.1 1 10 100
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

BYT51K-TR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.5 Amp 800 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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