Si3400/Si3401
10 Rev. 0.9
3. Functional Description
The Si3400 and Si3401 consist of two major functions:
a hotswap controller/interface and a complete pulse-
width-modulated switching regulator (controller and
power FET).
3.1. Overview
The hotswap interfaces of the Si3400 and Si3401
provide the complete front end of an 802.3-compliant
PD. The Si3400 and Si3401 also include two full diode
bridges, a transient voltage surge suppressor, detection
circuit, classification current source, and dual-level
hotswap current limiting switch. This high level of
integration enables direct connection to the RJ-45
connector, simplifies system design, and provides
significant advantages for reliability and protection. The
Si3400 and Si3401 require only four standard external
components (detection resistor, optional classification
resistor, load capacitor, and input capacitor) to create a
fully 802.3-compliant interface. For more information
about supporting higher-power applications, see
“AN313: Using the Si3400 and Si3401 in High Power
Applications” and “AN314: Power Combining Circuit for
PoE for up to 18.5 W Output”.
The Si3400 and Si3401 integrate a complete pulse-
width modulated switching regulator that includes the
controller and power FET. The switching regulator
utilizes a constant frequency pulse-width modulated
controller optimized for all possible load conditions in
PoE applications. The regulator integrates a low on-
resistance (Ron) switching power MOSFET that
minimizes power dissipation, increases overall regulator
efficiency, and simplifies system design. An integrated
error amplifier, precision reference, and programmable
soft-start current source provide the flexibility of using a
non-isolated buck regulator topology or an isolated
flyback regulator topology.
The Si3400 and Si3401 are designed to operate with
both 802.3-compliant Power Sourcing Equipment (PSE)
and pre-standard (legacy) PSEs that do not adhere to
the 802.3 specified inrush current limits. The Si3400
and Si3401 are compatible with compliant and legacy
PSEs because they use two levels for the hotswap
current limits. By setting the initial inrush current limit to
a low level, a PD based on the Si3400 or Si3401
minimizes the current drawn from either a compliant or
legacy PSE during startup. After powering up, the
Si3400 and Si3401 automatically switch to a higher-
level current limit, thereby allowing the PD to consume
up to 12.95 W (the max power allowed by the 802.3
specification).
The inrush current limit specified by the 802.3 standard
can generate high transient power dissipation in the PD.
By properly sizing the devices and implementing on-
chip thermal protection, the Si3400 and Si3401 can go
through multiple turn-on sequences without overheating
the package or damaging the device. The switching
regulator power MOSFET has been conservatively
designed and sized to withstand the high peak currents
created when converting a high-voltage, low-current
supply into a low-voltage, high-current supply.
Excessive power cycling or short circuit faults will
engage the thermal overload protection to prevent the
onboard power MOSFETs from exceeding their safe
and reliable operating ranges.
3.2. PD Hotswap Controller
The Si3400 and Si3401 hotswap controllers change
their mode of operation based on the input voltage
applied to the CT1 and CT2 pins or the SP1 and SP2
pins, the 802.3-defined modes of operation, and internal
controller requirements. Table 9 defines the modes of
operation for the hotswap interface.
Figure 3. Hotswap Block Diagram
DIODE BRIDGES
AND PROTECTION
DETECTION
CONTROL
ON
OFF
VPOSF
VNEG
CT1/SP1
CT2/SP2
0V
12V
RDET
CLASSIFICATION
CONTROL
ON
OFF
12V
22V
RCL
CENTRAL BIAS
BANDGAP REF
10V
5V
1.32V
CURRENT
LIMIT
HI/LO
HOTSWAP
CONTROL
ON
OFF
39V
32V
SWITCHER
STARTUP & BIAS
IABS
ITC
VREF
HSO
POWER LOSS
DETECTOR
PLOSS
SSFT
VPOSS
ISOSSFT
Si3400/Si3401
Rev. 0.9 11
3.2.1. Rectification Diode Bridges and
Surge Suppressor
The 802.3 specification defines the input voltage at the
RJ-45 connector of the PD with no reference to polarity.
In other words, the PD must be able to accept power of
either polarity at each of its inputs. This requirement
necessitates the use of two sets of diode bridges, one
for the CT1 and CT2 pins and one for the SP1 and SP2
pins to rectify the voltage. Furthermore, the standard
requires that a PD withstand a high-voltage transient
surge consisting of a 1000 V common-mode impulse
with 300 ns rise time and 50 µs half fall time. Typically,
the diode bridge and the surge suppressor have been
implemented externally, adding cost and complexity to
the PD system design.
The diode bridge* and the surge suppressor have been
integrated into the Si3400 and Si3401, thus reducing
system cost and design complexity.
*Note: Silicon Laboratories recommends that on-chip diode
bridges be bypassed when >10 W of output power is
required.
By integrating the diode bridges, the Si3400 and Si3401
gain access to the input side of the diode bridge.
Monitoring the voltage at the input of the diode bridges
instead of the voltage across the load capacitor
provides the earliest indication of a power loss. This true
early power loss indicator, PLOSS
, provides a local
microcontroller time to save states and shut down
gracefully before the load capacitor discharges below
the minimum 802.3-specified operating voltage of 36 V.
Integration of the surge suppressor enables
optimization of the clamping voltage and guarantees
protection of all connected circuitry.
As an added benefit, the transient surge suppressor,
when tripped, actively disables the hotswap interface
and switching regulator, preventing downstream circuits
from encountering the high-energy transients.
3.2.2. Detection
In order to identify a device as a valid PD, a PSE will
apply a voltage in the range of 2.8 V to 10 V on the
cable and look for the 25.5 k signature resistor. The
Si3400 and Si3401 will react to voltages in this range by
connecting an external 25.5 k resistor between VPOS
and VNEG. This external resistor and internal low-
leakage control circuitry create the proper signature to
alert the PSE that a valid PD has been detected and is
ready to have power applied. The internal hotswap
switch is disabled during this time to prevent the
switching regulator and attached load circuitry from
generating errors in the detection signature.
Since the Si3400 and Si3401 integrate the diode
bridges, the IC can compensate for the voltage and
resistance effects of the diode bridges. The 802.3
specification requires that the PSE use a multi-point,
V/I measurement technique to remove the diode-
induced dc offset from the signature resistance
measurement. However, the specification does not
address the diode's nonlinear resistance and the error
induced in the signature resistor measurement. Since
the diode's resistance appears in series with the
signature resistor, the PD system must find some way of
compensating for this error. In systems where the diode
bridges are external, compensation is difficult and
suffers from errors. Since the diode bridges are
integrated in the Si3400 and Si3401, the IC can easily
compensate for this error by offsetting resistance across
all operating conditions and thus meeting the 802.3
requirements. An added benefit is that this function can
be tested during the IC’s automated testing step,
guaranteeing system compliance when used in the final
PD application. For more information about supporting
higher-power applications (above 12.95 W), see
“AN313: Using the Si3400 and Si3401 in High Power
Applications” and “AN314: Power Combining Circuit for
PoE for up to 18.5 W Output”.
3.2.3. Classification
Once the PSE has detected a valid PD, the PSE may
classify the PD for one of five power levels or classes. A
class is based on the expected power consumption of
the powered device. An external resistor sets the
nominal class current that can then be read by the PSE
to determine the proper power requirements of the PD.
When the PSE presents a fixed voltage between 15.5 V
and 20.5 V to the PD, the Si3400 and Si3401 assert the
class current from VPOS through the RCL resistor.
Table 9. Hotswap Interface Modes
Input Voltage (|CT1-
CT2| or |SP1-SP2|)
Si3400 and Si3401
Mode
0 V to 2.7 V Inactive
2.7 V to 11 V Detection signature
11 V to 14 V Detection turns off and
internal bias starts
14 V to 22 V Classification signature
22 V to 42 V Transition region
42 V up to 57 V Switcher operating mode
(hysteresis limit based on
rising input voltage)
57 V down to 36 V Switcher operating mode
(hysteresis limit based on
falling input voltage)
Si3400/Si3401
12 Rev. 0.9
The resistor values associated with each class are
shown in Table 10.
The 802.3 specification limits the classification time to
75 ms to limit the power dissipated in the PD. If the PSE
classification period exceeds 75 ms and the die
temperature rises above the thermal shutdown limits,
the thermal protection circuit will engage and disable
the classification current source in order to protect the
Si3400 and Si3401. The Si3400 and Si3401 stay in
classification mode until the input voltage exceeds 22 V
(the upper end of its classification operation region).
3.2.4. Under Voltage Lockout
The 802.3 standard specifies the PD to turn on when
the line voltage rises to 42 V and for the PD to turn off
when the line voltage falls to 30 V. The PD must also
maintain a large on-off hysteresis region to prevent
wiring losses between the PSE and the PD from
causing startup oscillation.
The Si3400 and Si3401 incorporate an undervoltage
lockout (UVLO) circuit to monitor the line voltage and
determine when to apply power to the integrated
switching regulator. Before the power is applied to the
switching regulator, the hotswap switch output (HSO)
pin is high-impedance and typically follows VPOS as
the input is ramped (due to the discharged switcher
supply capacitor). When the input voltage rises above
the UVLO turn-on threshold, the Si3400 and Si3401
begin to turn on the internal hotswap power MOSFET.
The switcher supply capacitor begins to charge up
under the current limit control of the Si3400 and Si3401,
and the HSO pin transitions from VPOS to VNEG. The
Si3400 and Si3401 include hysteretic UVLO circuits to
maintain power to the load until the input voltage falls
below the UVLO turn-off threshold. Once the input
voltage falls below 30 V, the internal hotswap MOSFET
is turned off.
3.2.5. Dual Current Limit and Switcher Turn-On
The Si3400 and Si3401 implement dual current limits.
While the hotswap MOSFET is charging the switcher
supply capacitor, the Si3400 and Si3401 maintain a low
current limit. The switching regulator is disabled until the
voltage across the hotswap MOSFET becomes
sufficiently low, indicating the switcher supply capacitor
is almost completely charged. When this threshold is
reached, the switcher is activated, and the hotswap
current limit is increased. This threshold also has
hysteresis to prevent systemic oscillation as the
switcher begins to draw current and the current limit is
increased, which allows resistive losses in the cable to
effectively decrease the input supply.
The Si3400 and Si3401 stay in a high-level current limit
mode until the input voltage drops below the UVLO turn-
off threshold or excessive power is dissipated in the
hotswap switch. This dual level current limit allows the
system designer to design powered devices for use with
both legacy and compliant PoE systems.
An additional feature of the dual current limit circuitry is
foldback current limiting in the event of a fault condition.
When the current limit is switched to the higher level,
400 mA of current can be drawn by the PD. Should a
fault cause more than this current to be consumed, the
voltage across the hotswap MOSFET will increase to
clamp the maximum amount of power consumed. The
power dissipated by the MOSFET can be very high
under this condition. If the fault is very low impedance,
the voltage across the hotswap MOSFET will continue
to rise until the lower current limit level is engaged,
further reducing the dissipated power. If the fault
condition remains, the thermal overload protection
circuitry will eventually engage and shut down the
hotswap interface and switching regulator. The foldback
current limiting occurs much faster than the thermal
overload protection and is, therefore, necessary for
comprehensive protection of the hotswap MOSFET.
Table 10. Class Resistor Values
Class Usage Power Levels Nominal Class
Current
RCL Resistor (1%,
1/16 W)
0 Default 0.44 W to 12.95 W < 4 mA > 1.33 k
(or open circuit)
1 Optional 0.44 W to 3.84 W 10.5 mA 127
2 Optional 3.84 W to 6.49 W 18.5 mA 69.8
3 Optional 6.49 W to 12.95 W 28 mA 45.3
4 Reserved Reserved 40 mA 30.9

SI3401-D-GM

Mfr. #:
Manufacturer:
Silicon Labs
Description:
IC POWER OVER ETHERNET 20QFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union