©2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
10
100
10
300
600
1
1
100µs
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
10
100
500
0.001 0.01 0.1 1
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
10
0
30
60
90
150
234 56
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
120
30
60
90
150
01 2 3 4
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=5V
V
GS
= 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
120
0.5
1.0
1.5
2.0
3.0
-80 -40 0 40 80 120
200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160
2.5
0.4
0.8
1.0
1.2
-80 -40 0 40 80 120 200
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
0.6
160
HUFA75645P3, HUFA75645S3S
