FDZ299P Rev D2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
V
GS
= 0 V, I
D
= –250 µA
–20
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–15
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16 V, V
GS
= 0 V –1
µA
I
GSS
Gate–Body Leakage.
V
GS
= ±12 V, V
DS
= 0 V
±100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–0.6
–1.0
–1.5
V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
3.3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –4.6 A,
V
GS
= –2.5 V, I
D
= –3.6A,
V
GS
= –4.5 V, I
D
= –4.6 A, T
J
=125°C
44
68
58
55
80
71
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –10
A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –4.6 A 13 S
Dynamic Characteristics
C
iss
Input Capacitance 742
pF
C
oss
Output Capacitance 158
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
77 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 7.8
Ω
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 9 18 ns
t
r
Turn–On Rise Time 9 18 ns
t
d(off)
Turn–Off Delay Time 23 37 ns
t
f
Turn–Off Fall Time
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
14 25 ns
Q
g
Total Gate Charge 6.6
9 nC
Q
gs
Gate–Source Charge 1.6
nC
Q
gd
Gate–Drain Charge
V
DS
= –10V, I
D
= –4.6 A,
V
GS
= –4.5 V
1.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.4
A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.4 A
(Note 2)
–0.8
–1.2
V
t
rr
Diode Reverse Recovery Time 18 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= –4.6 A,
d
iF
/d
t
= 100 A/µs
6.5
nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a) 72°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
