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STTH6002CPI

P1-P3P4-P6P7-P9
April 2006 Rev 2 1/9
STTH6002C
High efficiency ultrafast diode
Main product characteristics
Features and benefits
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ High surge current capability
■ High junction temperature
Description
Dual center tab rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in TO-247 and TOP3I, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
Order codes
I
F(AV)
2 x 30 A
V
RRM
200 V
T
j
(max) 175° C
V
F
(typ) 0.75 V
t
rr
(typ) 22 ns
Part Number Marking
STTH6002CW STTH6002C
STTH6002CPI STTH6002C
A1
A1
NC
A1
K
K
K
A2
A2
A2
TO-247
STTH6002CW
TOP3I
STTH6002CPI
www.st.com
Characteristics STTH6002C
2/9
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, δ = 0.5
TO-247
Per diode T
c
= 140° C
30
A
Per device T
c
= 125° C
60
TOP3I
Per diode T
c
= 120° C
30
Per device T
c
= 105° C
60
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 330 A
T
stg
Storage temperature range -65 to +175 ° C
T
j
Maximum operating junction temperature 175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-247
Per diode 1.2
° C/W
Total 0.8
TOP3I
Per diode 1.8
Total 1.20
R
th(c)
Coupling
TO-247 0.4
TOP3I 0.6
STTH6002C Characteristics
3/9
To evaluate the conduction losses use the following equation:
P = 0.69 x I
F(AV)
+ 0.005 I
F
2
(RMS)
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
30
µA
T
j
= 125° C 30 300
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 30 A 1.05
V
I
F
= 60 A 1.18
T
j
= 150° C
I
F
= 30 A 0.75 0.84
I
F
= 60 A
0.9 0.99
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = 200 A/µs,
V
R
= 30 V, T
j
= 25 °C
22 27 ns
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = 200 A/µs,
V
R
= 160 V, T
j
= 125 °C
7.6 9.5 A
t
fr
Forward recovery time
I
F
= 30 A, dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
220 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 200 A/µs,
T
j
= 25 °C
2.5 V
Figure 1. Peak current versus duty cycle
(per diode)
Figure 2. Forward voltage drop versus
forward current (per diode)
0
20
40
60
80
100
120
140
160
180
200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 10 WP = 10 W
P = 5 WP = 5 W
P = 20 WP = 20 W
δ
0
50
100
150
200
250
300
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I
FM
(A)
T
j
=25°C
(max values)
T
j
=150°C
(max values)
T
j
=150°C
(typ values)
V
FM
(V)
P1-P3P4-P6P7-P9

STTH6002CPI

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Manufacturer:
STMicroelectronics
Description:
Rectifiers Hi EFFICIENCY ULTRAFAST DIODE
Lifecycle:
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