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MII200-12A4

P1-P3P4-P4
© 2000 IXYS All rights reserved
4 - 4
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 100 200 300
0
30
60
90
0
40
80
120
0 100 200 300
0
20
40
60
80
0
200
400
600
800
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
1
0 4 8 1216202428
0
10
20
30
40
50
0
400
800
1200
1600
2000
0 4 8 12 16 20 24 28
0
10
20
30
40
50
0
40
80
120
160
200
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 6.8
T
J
= 125°C
200-12
V
CE
= 600V
V
GE
= ±15V
I
C
= 150A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
100
200
300
400
R
G
= 6.8
T
J
= 125°C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 6.8
T
J
= 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 150A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
MII 200-12 A4 MID 200-12 A4
MDI 200-12 A4
P1-P3P4-P4

MII200-12A4

Mfr. #:
Buy MII200-12A4
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 200 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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