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RN4902FE,LF(CT

P1-P3P4-P6
RN4902FE
2014-03-01
1
TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type
(PCT Process) (Bias Resistor Built-in Transistor)
RN4902FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
R1: 10 kΩ
R2: 10 kΩ
(Q1, Q2 common)
Marking Equivalent Circuit
(top view)
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2N1G
Weight: 0.003g (typ.)
R1
R2
B
C
E
R1
R2
B
C
E
V B
6 54
123
Q1
Q2
Start of commercial production
2000-05
RN4902FE
2014-03-01
2
Absolute Maximum Ratings
(Ta = 25°C) (Q1)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−10 V
Collector current I
C
−100 mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
10 V
Collector current I
C
100 mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics Symbol Rating Unit
Collector power dissipation P
C
(Note 1) 100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
RN4902FE
2014-03-01
3
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristics Symbol Test Condition Min Typ. Max Unit
I
CBO
V
CB
= −50 V, I
E
= 0 ⎯ ⎯ −100
Collector cut-off current
I
CEO
V
CE
= −50 V, I
B
= 0 ⎯ ⎯ −500
nA
Emitter cut-off current I
EBO
V
EB
= −10 V, I
C
= 0 −0.32 ⎯ −0.71 mA
DC current gain h
FE
V
CE
= −5 V, I
C
= −10 mA 50 ⎯ ⎯
Collector-emitter saturation voltage V
CE (sat)
I
C
= −5 mA, I
B
= −0.25 mA ⎯ −0.1 −0.3 V
Input voltage (ON) V
I (ON)
V
CE
= −0.2 V, I
C
= −5 mA −1.2 ⎯ −2.4 V
Input voltage (OFF) V
I (OFF)
V
CE
= −5 V, I
C
= −0.1 mA −1.0 ⎯ −1.5 V
Transition frequency f
T
V
CE
= −10 V, I
C
= −5 mA ⎯ 200 ⎯ MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ⎯ 3 6 pF
Electrical Characteristics
(Ta = 25°C) (Q2)
Characteristics Symbol Test Condition Min Typ. Max Unit
I
CBO
V
CB
= 50 V, I
E
= 0 ⎯ ⎯ 100
Collector cut-off current
I
CEO
V
CE
= 50 V, I
B
= 0 ⎯ ⎯ 500
nA
Emitter cut-off current I
EBO
V
EB
= 10 V, I
C
= 0 0.38 ⎯ 0.71 mA
DC current gain h
FE
V
CE
= 5 V, I
C
= 10 mA 50 ⎯ ⎯
Collector-emitter saturation voltage V
CE (sat)
I
C
= 5 mA, I
B
= 0.25 mA ⎯ 0.1 0.3 V
Input voltage (ON) V
I (ON)
V
CE
= 0.2 V, I
C
= 5 mA 1.2 ⎯ 2.4 V
Input voltage (OFF) V
I (OFF)
V
CE
= 5 V, I
C
= 0.1 mA 1.0 ⎯ 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 5 mA ⎯ 250 ⎯ MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz ⎯ 3 6 pF
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Input resistor R1 ⎯ 7 10 13 kΩ
Resistor ratio R1/R2 ⎯ 0.9 1.0 1.1
P1-P3P4-P6

RN4902FE,LF(CT

Mfr. #:
Buy RN4902FE,LF(CT
Manufacturer:
Toshiba
Description:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lifecycle:
New from this manufacturer.
Delivery:
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