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IRF7495TRPBF

P1-P3P4-P6P7-P8
www.irf.com 1
9/21/04
IRF7495PbF
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
PD - 95288
V
DSS
R
DS(on)
max
I
D
100V
22m
@V
GS
= 10V
7.3A
Absolute Maximum Ratings
Parameter
Units
DS
Drain-to-Source Voltage V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θ
JL
Junction-to-Drain Lead ––– 20 °C/W
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 50
7.3
-55 to + 150
0.02
2.5
Max.
7.3
4.6
58
100
± 20
IRF7495PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 18 22
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
Q
g
Total Gate Charge ––– 34 51
Q
gs
Gate-to-Source Charge ––– 6.3 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 11.7 –––
t
d(on)
Turn-On Delay Time ––– 8.7 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 10 ––– ns
t
f
Fall Time ––– 36 –––
C
iss
Input Capacitance ––– 1530 –––
C
oss
Output Capacitance ––– 250 –––
C
rss
Reverse Transfer Capacitance ––– 110 ––– pF
C
oss
Output Capacitance ––– 980 –––
C
oss
Output Capacitance ––– 160 –––
C
oss
eff.
Effective Output Capacitance ––– 240 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 2.3
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 58
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 42 ––– ns
Q
rr
Reverse Recovery Charge ––– 73 ––– nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
Conditions
V
DS
= 25V, I
D
= 4.4A
I
D
= 4.4A
V
DS
= 50V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
180
4.4
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.4A, V
DD
= 25V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.4A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Max.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 4.4A
R
G
= 6.2
Ω
IRF7495PbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 50V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 7.3A
V
GS
= 10V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
20µs PULSE WIDTH
Tj = 150°C
4.5V
VGS
TOP 15V
10V
8.0V
5.0V
BOTTOM 4.5V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 25°C
4.5V
P1-P3P4-P6P7-P8

IRF7495TRPBF

Mfr. #:
Buy IRF7495TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg
Lifecycle:
New from this manufacturer.
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