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Electrical characteristics STW30NM60D
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, @125°C
10
100
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V ± 10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 3 4 5 V
R
DS(on
Static drain-source on
resistance
V
GS
= 10V, I
D
= 15A 0.125 0.145 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
Forward transconductance V
DS
= 15V , I
D
= 15A 16 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
2520
800
75
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output capacitance V
GS
= 0V, V
DS
= 0 to 480V 390 pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480V, I
D
= 30A,
V
GS
= 10V
Figure 15
82
24
42
115 nC
nC
nC
