PDF: 09005aef8137b07b/Source: 09005aef8137b02d Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C16_32x64AG.fm - Rev. E 12/10 EN
14 ©2003, 2004 Micron Technology, Inc. All rights reserved.
a - Value calculated as one module rank in this operating condition, and all otherranks in Power-Down Mode.
b - Value calculated reflects all module ranks in this operating condition.
DD Specifications and Conditions – 128MB
PARAMETER/CONDITION SYMBOL
MAX
UNITS NOTES-13E -133 -10E
t
RC =
t
RC (MIN)
I
DD1 1,280 1,200 1,120 mA 3, 18, 19,
30
STANDBY CURRENT: Power-Down Mode;
All device device banks idle; CKE = LOW
I
DD2 16 16 16 mA 30
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD met;
No accesses in progress
IDD3 400 400 320 mA 3, 12, 19,
30
OPERATING CURRENT: Burst Mode;
Continuous burst; READ or WRITE; All device banks active
I
DD4 1,320 1,280 1,200 mA 3, 18, 19,
30
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
t
RFC =
t
RFC (MIN)
I
DD5 2,640 2,480 2,160 mA 3, 12, 18,
19, 30, 31
t
RFC = 15.625µs
IDD6 24 24 24 mA
SELF REFRESH CURRENT: CKE £ 0.2V
I
DD7 16 16 16 mA 4
Notes: 1, 5, 6, 11, 13; notes appear on page 18; VDD, VDDQ = +3.3V ±0.3V; SDRAM components only
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
I
DD1
a
1,296 1,216 1,136 mA 3, 18, 19,
30
STANDBY CURRENT: Power-Down Mode;
All device banks idle; CKE = LOW
I
DD2
b
32 32 32 mA 30
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD met;
No accesses in progress
IDD3
a
416 416 336 mA 3, 12, 19,
30
OPERATING CURRENT: Burst Mode;
Continuous burst; READ or WRITE; All device banks active
I
DD4
a
1,336 1,216 1,136 mA 3, 18, 19,
30
AUTO REFRESH CURRENT
CS# = HIGH; CKE = HIGH
t
RFC =
t
RFC (MIN)
I
DD5
b
5,280 4,960 4,320 mA 3, 12, 18,
19, 30, 31
t
RFC = 15.625µs
I
DD6
b
48 48 48 mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
I
DD7
b
32 32 32 mA 4
