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123NQ100R-1

P1-P3P4-P5
Technical Data
Data Sheet N1161, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
123NQ080/R-1
123NQ100/R-1
123NQ080/R-1 123NQ100/R-1SCHOTTKY RECTIFIER
Characteristics
Symbol
Condition
Max.
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
-
80
123NQ080(R)-1
V
100
123NQ100(R)-1
Average Forward Current
I
F(AV)
50% duty cycle @T
C
=133°C,
rectangular wave form
120
A
Peak One Cycle Non-Repetitive
Surge Current
I
FSM
8.3 ms, half Sine pulse
2520
A
Non-Repetitive Avalanche Energy
E
AS
T
J
=25℃,I
AS
=1A,L=30mH
15
mJ
Repetitive Avalanche Current
I
AR
Current decaying linearly to zero in 1
μsec Frequency limited by T
J
max.
V
A
=1.5×V
R
typical
1
A
Circuit Diagram
Applications
Maximum Ratings:
175℃ T
J
operation
Unique high power, Half-Pak module
Replaces three parallel DO-5’S
Easier to mount and lower profile than DO-5’S
High purity, high temperature epoxy encapsulation
for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
PRM1-1(HALF PAK Module)
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
123NQ...-1
123NQ...R-1
Technical Data
Data Sheet N1161, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
123NQ080/R-1
123NQ100/R-1
Characteristics
Symbol
Condition
Typ.
Max.
Units
Forward Voltage Drop*
V
F1
@ 120A, Pulse, T
J
= 25
C
@ 240A, Pulse, T
J
= 25 C
0.80
-
0.91
1.08
V
V
F2
@ 120A, Pulse, T
J
= 125 C
@ 240A, Pulse, T
J
= 125
C
0.61
-
0.74
0.88
V
Reverse Current*
I
R1
@V
R
= rated VR T
J
= 25 C
0.001
3
mA
I
R2
@V
R
= rated VR T
J
= 125 C
1
40
mA
Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25 C
f
SIG
= 1MHz
2400
2650
pF
Max. Voltage Rate of Change
dv/dt
-
-
10,000
V/s
* Pulse width < 300 µs, duty cycle < 2%
Characteristics
Symbol
Condition
Specification
Units
Junction Temperature
T
J
-
-55 to +175
C
Storage Temperature
T
stg
-
-55 to +175
C
Typical Thermal Resistance
Junction to Case
R
JC
DC operation
0.40
C/W
Typical Thermal Resistance, case
to Heat Sink
R
cs
Mounting surface, smooth and
greased
0.15
C/W
Mounting Torque
T
M
Non-lubricated threads
Mounting
Torque
23(min)
29(max)
Kg-cm
Terminal
Torque
35(min)
46(max)
Approximate Weight
wt
-
25.6
g
Case Style
PRM1-1
Electrical Characteristics:
Thermal-Mechanical Specifications:
Technical Data
Data Sheet N1161, Rev. A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
123NQ080/R-1
123NQ100/R-1
Ratings and Characteristics Curves
P1-P3P4-P5

123NQ100R-1

Mfr. #:
Buy 123NQ100R-1
Manufacturer:
Description:
DIODE SCHOTTKY 100V 120A PRM1-1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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