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AFV09P350-04GNR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
AFV09P350--04NR3 AFV09P350--04GNR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
V
DD
=48Vdc,I
DQ
= 862 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.32 + j3.41 1.84 + j0.12 21.3 54.1 260 59.9 –14
940 2.54 – j4.03 2.49 + j3.84 1.85 + j0.11 21.3 54.1 258 59.9 –14
960 2.90 – j4.64 2.76 + j4.31 1.77 + j0.13 21.2 54.1 259 59.8 –15
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.29 + j3.66 2.11 – j0.03 19.1 54.8 301 61.1 –19
940 2.54 – j4.03 2.45 + j4.12 2.04 – j0.03 19.2 54.8 299 60.8 –18
960 2.90 – j4.64 2.74 + j4.63 1.97 – j0.01 19.1 54.8 300 60.6 –19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate c ontact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=48Vdc,I
DQ
= 862 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.11 + j3.81 1.51 + j1.85 24.3 51.5 140 71.8 –20
940 2.54 – j4.03 2.27 + j4.24 1.43 + j1.84 24.3 51.4 138 71.9 –21
960 2.90 – j4.64 2.60 + j4.68 1.46 + j1.61 23.8 52.2 164 71.6 –20
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.22 + j3.95 1.92 + j1.53 21.5 53.2 207 71.6 –25
940 2.54 – j4.03 2.38 + j4.45 1.74 + j1.57 21.7 52.9 197 71.8 –27
960 2.90 – j4.64 2.66 + j4.94 1.59 + j1.48 21.5 53.1 206 72.0 –27
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate c ontact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFV09P350--04NR3 AFV09P350--04GNR3
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=48Vdc,V
GSB
=0.9Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.33 + j3.43 1.52 + j0.07 16.8 54.7 294 66.5 –25
940 2.54 – j4.03 2.44 + j3.87 1.44 + j0.21 16.9 54.6 291 66.9 –25
960 2.90 – j4.64 2.64 + j4.34 1.58 + j0.24 17.0 54.5 283 66.5 –25
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.28 + j3.69 1.68 – j0.06 14.7 55.3 335 66.8 –29
940 2.54 – j4.03 2.40 + j4.15 1.60 + j0.13 14.9 55.2 332 68.0 –30
960 2.90 – j4.64 2.61 + j4.66 1.71 + j0.14 14.9 55.1 325 66.8 –30
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate c ontact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=48Vdc,V
GSB
= 0.9 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.22 + j3.39 1.81 + j1.79 17.5 52.4 174 78.9 –29
940 2.54 – j4.03 2.27 + j3.80 1.35 + j2.23 17.6 51.2 131 81.4 –35
960 2.90 – j4.64 2.43 + j4.27 1.24 + j2.22 17.6 51.2 131 81.6 –36
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 2.39 – j3.65 2.20 + j3.66 2.07 + j1.45 15.5 53.6 231 77.1 –33
940 2.54 – j4.03 2.31 + j4.12 1.86 + j1.49 15.7 53.6 231 78.9 –36
960 2.90 – j4.64 2.50 + j4.62 1.70 + j1.64 15.8 53.4 218 78.7 –37
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate c ontact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
AFV09P350--04NR3 AFV09P350--04GNR3
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 940 MHz
-- 1
3
2.5
IMAGINARY ()
22.5
13.5
1
1.5
0.5
0
3
2
1.5
-- 0 . 5
-- 1
3
2.5
IMAGINARY ()
22.5
13.5
1
1.5
0.5
0
3
2
1.5
-- 0 . 5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 1
3
2.5
IMAGINARY ()
22.5
13.5
1
1.5
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
0.5
0
3
2
1.5
-- 0 . 5
-- 1
3
2.5
IMAGINARY ()
22.5
13.5
1
1.5
0.5
0
3
2
1.5
-- 0 . 5
51.5
51
P
E
52
52.5
53
52.5
53
53.5
54
50.5
50
P
E
60
56
62
58
64
66
68
70
P
E
21.5
21
22
22.5
23
23.5
24
24.5
25
P
E
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1 4
-- 1 2
-- 1 0
56
58
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

AFV09P350-04GNR3

Mfr. #:
Buy AFV09P350-04GNR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 720-960 MHz 100 W AVG. 48 V
Lifecycle:
New from this manufacturer.
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