DVIULC6-2M6

PROTECTION PRODUCTS
1
www.semtech.com
PROTECTION PRODUCTS - MicroClamp
®®
®®
®
uClamp3312T
Low Voltage μClamp
®®
®®
®
for Gigabit Ethernet
Description
Features
Typical Application Schematic & PIN Configuration
Revision 4/25/2010
Applications
Mechanical Characteristics
SLP2010N8T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 2.0 x 1.0 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking: Marking code
Packaging: Tape and Reel
SLP2010N8T
GBE Integrated Magnetics Module
High ESD withstand Voltage: +/-30kV (Contact/Air)
per IEC 61000-4-2
Able to withstand over 1000 ESD strikes per IEC
61000-4-2 Level 4
Flow-through design simplifies layout
Protects two line pairs
Low reverse current: 10nA typical (VR=3.3V)
Low variation in capacitance vs. bias voltage:
1.3pF Typical (VR = 0 to 3.3V)
Working voltage: 3.3V
Solid-state silicon-avalanche technology
1
2
10/100/1000 Ethernet
Integrated magnetics/RJ-45 connectors
LAN/WAN Equipment
Security Cameras
Industrial Controls
Notebooks & Desktop Computers
The μClamp
®
3312T TVS diode is specifically designed
to meet the performance requirements of Gigabit
Ethernet interfaces. They are designed to protect
sensitive PHY chips from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The μClamp3312T is constructed using Semtech’s low
voltage EPD process technology. The EPD process
provides low operating voltages with significant reduc-
tions in leakage current and capacitance over silicon-
avalanche diode processes. The device features low
variation in capacitance over bias for stable operation
on GbE lines. This means the μClamp3312T will
introduce zero traffic frame errors on GbE interfaces
up to a PHY temperature of 120
o
C (100M Cat 5/5e
Cable). The μClamp3312T also features high surge
capability and is designed to be placed between the
magnetics and the PHY chip. In this configuration, the
device can withstand intra-building lightning surges per
Telcordia GR-1089.
The μClamp3312T is in a 8-pin SLP2010N8T package.
It measures 2.0 x 1.0 x 0.4mm. The leads are spaced
at a pitch of 0.5mm and are finished with lead-free
NiPdAu. Each device will protect two line pairs operat-
ing at 3.3 volts. It gives the designer the flexibility to
protect multiple lines in applications where space is at
a premium. The small size and easy layout of the
uClamp3312T make it ideal for use in RJ-45 connec-
tors with integrated magnetics.
1
2
3
4
5
6
7
8
RJ-45
Connector
TP2+
TP2-
TP3+
TP3-
TP4+
TP4-
TP1+
TP1-
1
2
3
4
5
6
7
8
RJ-45
Connector
TP2+
TP2-
TP3+
TP3-
TP4+
TP4-
TP1+
TP1-
1
2
3
4
5
6
7
8
RJ-45
Connector
TP2+
TP2-
TP3+
TP3-
TP4+
TP4-
TP1+
TP1-
2© 2010 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp3312T
Absolute Maximum Rating
Electrical Characteristics (T=25
o
C)
gnitaRlobmySeulaVstinU
)sμ02/8=pt(rewoPesluPkaePP
kp
001sttaW
(tnerruCesluPkaePmumixaM)sμ02/8=ptI
pp
01spmA
)riA(2-4-00016CEIrepDSE
)tcatnoC(2-4-00016CEIrepDSE
V
DSE
03-/+
03-/+
Vk
erutarepmeTgnitarepOT
J
58+ot04-C°
erutarepmeTegarotST
GTS
051+ot55-C°
retemaraPlobmySsnoitidnoCmuminiMlacipyTmumixaMstinU
egatloVffO-dnatSesreveRV
MWR
3.3V
egatloVhguorhT-hcnuPV
TP
I
TP
Aμ2=5.38.33.4V
egatloVkcaB-panSV
BS
I
BS
Am05=8.2V
tnerruCegakaeLesreveRI
R
V
MWR
V3.3=10.050.0Aμ
egatloVgnipmalCV
C
I
PP
sμ02/8=pt,A1=6.5V
egatloVgnipmalCV
C
I
PP
sμ02/8=pt,A01=11V
htiwecnaticapacninoitairaV
saibesrever
1
dna7,2ot8,1sniP
5,4ot6,3snip
V5.2ot0=RV
zHM1=f
dna7,2ot8,1sniP
5,4ot6,3snip
zHM1=f,V5.2=RV
3.1Fp
ecnaticapaCno
itcnuJC
j
dnGotnipO/I
V
R
zHM1=f,V0=
5.46Fp
Notes:
1) This parameter guaranteed by design and characterization and is not production tested
3© 2010 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp3312T
Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current
Normalized Junction Capacitance vs. Reverse Voltage
Typical Insertion Loss (S21)
ESD Clamping (Pin 1 to 2 and 2 to 1)
(-8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
ESD Clamping (Pin 1 to 2 and 2 to 1)
(8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
00.511.522.53
Reverse Voltage - V
R
(V)
C
j
(V
R
) / C
j
(V
R
=0V)
f = 1 MHz
1
2
3
4
START
.
030 MHz
3 STOP 000 . 000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -2.2287 dB
800 MHz
2: -2.3884 dB
900 MHz
3: -5.5200 dB
1.8 GHz
4: -13.643 dB
2.5 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
-42 dB
-48 dB
0.01
0.1
1
10
0.1 1 10 100
Pulse Duration - tp (us)
Peak Pulse Power - P
PP
(kW)
0
1
2
3
4
5
6
7
8
9
10
024681012
Peak Pulse Current - I
PP
(A)
Clamping Voltage - V
C
(V)
Waveform
Parameters:
tr = 8μs
td = 20μs

DVIULC6-2M6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors Ultra low cap 0.6 pF F=825MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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