BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 2 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
Table 2. Ordering information
Type number Package
Name Description Version
BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54
BT169D
BT169G
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
, V
RRM
repetitive peak off-state voltages
BT169B
[1]
-200V
BT169D
[1]
-400V
BT169G
[1]
-600V
I
T(AV)
average on-state current half sine wave;
T
lead
83 C;
see Figure 1
-0.5A
I
T(RMS)
RMS on-state current all conduction angles;
see Figure 4
and 5
-0.8A
I
TSM
non-repetitive peak on-state current half sine wave;
T
j
=25C prior to
surge;
see Figure 2
and 3
t = 10 ms - 8 A
t = 8.3 ms - 9 A
I
2
tI
2
t for fusing t = 10 ms - 0.32 A
2
s
dI
T
/dt repetitive rate of rise of on-state
current after triggering
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/s
-50A/s
I
GM
peak gate current - 1 A
V
GM
peak gate voltage - 5 V
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature 40 +150 C
T
j
junction temperature - 125 C
