RPI-222
Photointerrupter, Small type
Applications
Optical control equipment
Cameras
Floppy disk drives
Digital video disc
Features
1) Ultra-small.
2) Minimal influence from stray light.
3) Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
Anode
Collector
Cathode
Emitter
Gap
Optical axis center
Cross-section A-A
Through hole
A
A
C0.7
2-R0.3
4.9±0.3
2.6
(0.4)
(0.2)
2±0.3
2.3
3.3Min.5
4-0.2
1
(4)
10.5
4-0.5
4-0.4
(2)
(1.5)
4
2
4-φ0.8
Fig.1 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
0.50 1.0 1.5 2.0 2.5
0
20
40
60
80
100
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
0.50 1.0 1.5 2.0 2.5
0
20
40
60
80
100
d
Fig.2 Forward current falloff
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (°C)
−20 0 20 40 60 80 100
10
50
40
30
20
0
Fig.10 Output characteristics
COLLECTOR CURRENT : Ic (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
4861020
0
1.5
3.0
IF=50mA
40mA
30mA
20mA
10mA
t
d : Delay time
tr : Rise time (time for output current to rise
from 10% to 90% of peak current)
tf : Fall time (time for output current to fall
from 90% to 10% of peak current)
td
tr
tf
10%
90%
RL
VCCInput
Intput
Output
Output
Fig.11 Response time measurement circuit
Fig.8 Response time vs.
collector current
RESPONSE TIME : t (µs)
COLLECTOR CURRENT : Ic (mA)
1000.1 1 10
1
10
100
1000
Ta=25°C
Vcc=5V
RL=1kΩ
RL=500Ω
RL=100Ω
Fig.9 Dark current vs.
ambient temperature
DARK CURRENT : ID (nA)
AMBIENT TEMPERATURE : Ta (°C)
−25 0 25 50 75 100
0.1
1
10
100
1000
VCE=30V
VCE=20V
VCE=10V
Fig.6 Relative output vs. ambient
temperature
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
−40 −20 0 20406080100
0
20
40
60
80
100
120
160
140
Fig.7 Collector current vs.
forward current
COLLECTOR CURRENT : Ic (mA)
FORWARD CURRENT : IF (mA)
0 1020304050
0
1.0
2.0
FORWARD VOLTAGE : VF (V)
FORWARD CURRENT : IF (mA)
Fig.3 Forward current vs. forward
voltage
0°C
25°C
50°C
75°C
−25°C
0.4 0.6 0.80.2 1.0 1.2 1.4 1.6 1.8
0
50
40
30
20
10
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : P
D
/ Pc (mW)
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
−20 0 20
P
D PC
40 60 80 100
0
20
40
60
80
100
120
Parameter Symbol
V
F
IR
ICEO
λ
P
IC
VCE(sat)
tr tf
Min.
−
−
−
−
0.18
−
−
Typ.
1.3
−
−
800
0.3
−
10
Max.
1.6
10
0.5
−
0.95
0.4
−
Unit
VI
F=50mA
V
R=5V
V
CE=10V
−
V
CE=5V, IF=10mA
I
F=20mA, IC=0.1mA
V
CC=5V, IF=20mA, RL=100Ω
µA
µA
nm
mA
V
µs
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λ
P
fC
IF=50mA
−
− 1 − MHz
−
950
−
nm
Maximum sensitivity wavelength
λ
P
−
800
−
nm
∗ This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Response time − 10 −
µs
Photo
transistor
Infrared
light
emitter
diode
Parameter Symbol
I
C
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−30 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(
LED
)
Output
photo-
transistor
(
)
