A
K
DO-247
A
K
Features
High junction temperature capability
Ultrafast with soft recovery behavior
Low reverse current
Low thermal resistance
reduced switching and conduction losses
Description
The STTH60RQ06 has been developed for applications requiring a high-voltage
secondary rectification for LLC full bridge topology.
Also it is ideal for switching power supplies and industrial applications, as
rectification, freewheeling and clamping diode.
Product status link
STTH60RQ06
Product summary
Symbol Value
I
F(AV)
60 A
V
RRM
600 V
V
F
(max.)
1.45 V
t
rr
(max.)
35 ns
T
j
(max.)
175 °C
Turbo 2 ultrafast high voltage rectifier
STTH60RQ06
Datasheet
DS12515 - Rev 1 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current 90 A
I
F(AV)
Average forward current 60 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 425 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 2. Thermal resistance parameters
Symbol Parameter Max. Unit
R
th(j-c)
Junction to case 0.38 °C/W
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 80
µA
T
j
= 150 °C - 160 1600
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 30 A
- 2.45
V
T
j
= 150 °C - 1.15 1.45
T
j
= 25 °C
I
F
= 60 A
- 2.95
T
j
= 150 °C - 1.45 1.85
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.05 x I
F(AV)
+ 0.013 x I
F
2
(RMS)
Table 4. Dynamic electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A - 35
ns
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = -50 A/µs - 50 65
I
RM
Reverse recovery current
T
j
= 125 °C I
F
= 60 A, V
R
= 400 V, dl
F
/dt = -200 A/µs
- 12 16 A
Q
rr
Reverse recovery charge - 660 nC
t
rr
Reverse recovery time - 92 ns
STTH60RQ06
Characteristics
DS12515 - Rev 1
page 2/10
1.1 Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (square waveform)
0
40
80
120
160
200
0 10 20 30 40 50 60 70 80
I
F(AV)
(A)
P
F(AV)
(W)
δ=0.05
δ=0.1
δ=0.2
δ=0.5 δ=1
T
δ
=tp/T
tp
Figure 2. Average forward power dissipation versus
average forward current (sinusoidal waveform)
0
40
80
120
160
200
0 10 20 30 40 50 60 70 80 90
I
F(AV)
(A)
P
F(AV)
(W)
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
Figure 3. Forward voltage drop versus forward current
(typical values)
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
(V)
I
F
(A)
T
j
=25 °C
T
j
=150 °C
T
j
=175 °C
Figure 4. Forward voltage drop versus forward current
(maximum values)
0.1
1.0
10.0
100.0
0.0 1.0 2.0 3.0 4.0
V
F
(V)
I
F
(A)
T
j
=25 °C
T
j
=150 °C
T
j
=175 °C
Figure 5. Relative variation of thermal impedance junction
to case versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t
P
(s)
Z
th(j-c)
/R
th(j-c)
Figure 6. Peak reverse recovery current versus dI
F
/dt
(typical values)
0
10
20
30
0 50 100 150 200 250 300 350 400 450 500
dI
F
/dt(A/µs)
I
RM
(A)
V
R
=400 V
T
j
=125 °C
I
F
= 60A
I
F
= 15A
I
F
= 30A
STTH60RQ06
Characteristics (curves)
DS12515 - Rev 1
page 3/10

STTH60RQ06W

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Turbo 2 ultrafast high voltage rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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