IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 2N80
IXTP 2N80
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 20 V; I
D
= 0.5 • I
D25
, pulse test 1.0 2.0 S
C
iss
440 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 56 pF
C
rss
15 pF
t
d(on)
15 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
18 ns
t
d(off)
R
G
= 18Ω, (External) 30 ns
t
f
15 ns
Q
g(on)
22 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
5.5 nC
Q
gd
12 nC
R
thJC
2.3 K/W
R
thCK
(IXTP) 0.5 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 2 A
I
SM
Repetitive; pulse width limited by T
JM
8A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V 510 ns
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 AD Dimensions
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
