MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MBRD
Unit
620CT 630CT 640CT 650CT 660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 50 60 V
Average Rectified Forward Current Per Diode
T
C
= 130°C (Rated V
R
) Per Device
I
F(AV)
3
6
A
Peak Repetitive Forward Current, T
C
= 130°C
(Rated V
R
, Square Wave, 20 kHz) Per Diode
I
FRM
6 A
Nonrepetitive Peak Surge Current − (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
I
FSM
75 A
Peak Repetitive Reverse Surge Current (2 s, 1 kHz) I
RRM
1 A
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Storage Temperature T
stg
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000 V/s
THERMAL CHARACTERISTICS PER DIODE
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case R
JC
6 °C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 2) R
JA
80 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 3)
i
F
= 3 Amps, T
C
= 25°C
i
F
= 3 Amps, T
C
= 125°C
i
F
= 6 Amps, T
C
= 25°C
i
F
= 6 Amps, T
C
= 125°C
V
F
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 125°C)
i
R
0.1
15
mA
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
JA
.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
