RS1PB, RS1PD, RS1PG, RS1PJ
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Vishay General Semiconductor
Revision: 29-Feb-16
1
Document Number: 88934
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount Glass Passivated
Fast Switching Rectifier
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• Low thermal resistance
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
30 A
t
rr
150 ns, 250 ns
I
R
1 μA
V
F
1.3 V
T
J
max. 150 °C
Package DO-220AA (SMP)
Diode variation Single die
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RS1PB RS1PD RS1PG RS1PJ UNIT
Device marking code RB RD RG RJ
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RS1PB RS1PD RS1PG RS1PJ UNIT
Maximum instantaneous forward voltage I
F
= 1.0 A V
F
(1)
1.3 V
Maximum reverse current at rated
V
R
voltage
T
A
= 25 °C
I
R
(2)
1.0
μA
T
A
= 125 °C 60
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
150 250 ns
Typical junction capacitance 4.0 V, 1 MHz C
J
9pF
