NUP4000DR2G

© Semiconductor Components Industries, LLC, 2009
October, 2017 Rev. 1
1 Publication Order Number:
NUP4000/D
NUP4000
ESD Protection Diode Array
Bidirectional ESD Protection for
HighSpeed Data Line
The NUP4000 surge protection is designed to protect equipment
attached to up to four high speed communication lines from ESD,
EFT, and lightning.
Features:
SO8 Package
Peak Power 400 W 8 x 20 mS
ESD Rating:
IEC 6100042 (ESD) ±15 kV (air) ±8 kV (contact)
IEC 6100044 (EFT) 40 A (5/50 ns)
IEC 6100045 (lightning) 12 A (8/20 ms)
UL Flammability Rating of 94 V0
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications:
High Speed Communication Line Protection
15 V Data and I/O Lines
Microprocessor Based Equipment
LAN/WAN Equipment
Servers
Notebook and Desktop PC
Serial and Parallel Ports
Peripherals
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation
8 x 20 ms @ T
A
= 25°C (Note 1)
P
pk
400 W
Peak Pulse Current
8 x 20 ms @ T
A
= 25°C (Note 1)
I
PP
10 A
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°C
Lead Solder Temperature
Maximum 10 Seconds Duration
T
L
260 °C
1. Nonrepetitive current pulse 8 x 20 mS exponential decay waveform
SO8
VOLTAGE SUPPRESSOR
400 WATTS PEAK POWER
15 VOLTS
1
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
NUP4000DR2G SO8
(PbFree)
2500 / Tape & Reel
SO8
CASE 751
2
3
4
8
7
6
5
PIN CONFIGURATION
AND SCHEMATIC
www.onsemi.com
1
8
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUP40
AYWWG
G
1
8
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
NUP4000
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse Working Voltage V
RWM
15 V
Reverse Breakdown Voltage @ I
t
= 1.0 mA V
BR
16.7 V
Reverse Leakage Current @ V
RWM
= 15 Volts I
R
N/A 1.0
mA
Maximum Clamping Voltage @ I
PP
= 1.0 A, 8 x 20 mS
V
C
N/A 24 V
Maximum Clamping Voltage @ I
PP
= 5.0 A, 8 x 20 mS
V
C
N/A 30 V
Maximum Peak Pulse Current I
PP
10 A
Junction Capacitance @ V
R
= 0 V, f = 1 MHz C
J
75 pF
% OF PEAK PULSE CURRENT
Figure 1. Pulse Width
Figure 2. 8 × 20 ms Pulse Waveform
100
10
1
1 10 100 1000
t, TIME (ms)
1000
NOTE: NonRepetitive Surge.
100
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (ms)
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
P
pk
, PEAK SURGE POWER (WATTS)
NUP4000
www.onsemi.com
3
PACKAGE DIMENSIONS
SOIC8 NB
CASE 75107
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 75101 THRU 75106 ARE OBSOLETE. NEW
STANDARD IS 75107.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
X
Y
G
M
Y
M
0.25 (0.010)
Z
Y
M
0.25 (0.010) Z
S
X
S
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒ
mm
inches
Ǔ
SCALE 6:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*

NUP4000DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 4 CHAN BIDIRECTIONAL TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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