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HMC589AST89E

P1-P3P4-P6P7-P7
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS & GAIN BLOCK - SMT
3
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Gain, Power & OIP3 vs. Supply Voltage
@ 850 MHz, Rbias = 1.8 Ohms
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, Rbias= 1.8 Ohms
4
8
12
16
20
24
012345
+25 C +85 C -40 C
FREQUENCY (GHz)
P1dB (dBm)
4
8
12
16
20
24
012345
+25 C +85 C -40 C
FREQUENCY (GHz)
Psat (dBm)
20
24
28
32
36
40
012345
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
4.5 5 5.5
Gain
P1dB
Psat
IP3
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vs (Vdc)
70
72
74
76
78
80
82
84
86
88
90
4.83 4.84 4.85 4.86 4.87 4.88
Icc (mA)
Vcc (Vdc)
+85 C
-40 C
+25 C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS & GAIN BLOCK - SMT
4
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc
RF Input Power (RFIN)(Vcc = +5 Vdc)
+10 dBm up to 1 GHz
+8 dBm from 1-4 GHz
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
0.45 W
Thermal Resistance
(junction to ground paddle)
145 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 2
Part Number Package Body Material Lead Finish MSL Rating Package Marking
[2]
HMC589AST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
MSL1
[1]
H589A
XXXX
[1] Max peak reow temperature of 260 °C
[2] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS & GAIN BLOCK - SMT
5
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Application Circuit
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50 900 1900 2200 2400 3500 4000
L1 270 nH 56 nH 24 nH 24 nH 15 nH 8.2 nH 8.2 nH
C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. Rbias provides DC bias stability over temperature.
Pin Descriptions
Pin Number Function Description Interface Schematic
1 IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3 OUT RF output and DC Bias (Vcc) for the output stage.
2, 4 GND
These pins and package bottom
must be connected to RF/DC ground.
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc
Supply Voltage (Vs) 5V 6V 8V
Rbias Value 1.8 Ω 13 Ω 38 Ω
Rbias Power rating
1
/8 W ¼ W ½ W
P1-P3P4-P6P7-P7

HMC589AST89E

Mfr. #:
Buy HMC589AST89E
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier MMIC AMPLIFIER, DC - 4 GHzFor
Lifecycle:
New from this manufacturer.
Delivery:
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